Layered structures and electronic devices including the same

ABSTRACT

A layered structure including a photoluminescent layer including a quantum dot polymer composite; a light absorption layer disposed on the photoluminescent layer, the light absorption layer including an absorptive color-filter material; and a silicon containing layer disposed between the photoluminescent layer and the light absorption layer, wherein the quantum dot polymer composite includes a first polymer matrix and a plurality of quantum dots dispersed in the first polymer matrix, and the plurality of quantum dots absorb excitation light and emits light in a longer wavelength than the wavelength of the excited light; and the absorptive color-filter material is dispersed in a second polymer matrix, and the absorptive color-filter material absorbs the excitation light that passes through the photoluminescent layer and transmits the light emitted from the plurality of quantum dots and an electronic device including the same.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation application of U.S. patentapplication Ser. No. 16/223,186, filed on Dec. 18, 2018, which claimspriority to Korean Patent Application No. 10-2017-0174587 filed in theKorean Intellectual Property Office on Dec. 18, 2017, and all thebenefits accruing therefrom under 35 U.S.C. § 119, the content of whichis incorporated herein in its entirety by reference.

BACKGROUND 1. Field

Layered structures and electronic devices including the same aredisclosed.

2. Description of the Related Art

Semiconductor nanocrystal particles also known as quantum dots arenano-sized crystalline material, e.g., having a diameter of less than orequal to about 10 nanometers (nm). Such semiconductor nanocrystalparticles may have a large surface area per unit volume due torelatively small sizes and may exhibit characteristics different frombulk materials having the same composition due to a quantum confinementeffect. Quantum dots may absorb light from an excitation source to beexcited, and may emit energy corresponding to the energy bandgap of thequantum dots.

SUMMARY

An embodiment provides a layered structure capable of realizing improvedluminous efficiency and color reproducibility.

An embodiment provides an electronic device including the layeredstructure.

An embodiment provides a display device (e.g., a liquid crystal displayincluding the layered structure.

In an embodiment, a layered structure includes a photoluminescent layerincluding a quantum dot polymer composite;

a light absorption layer disposed on the photoluminescent layer, thelight absorption layer including an absorptive color-filter material;and

a silicon containing layer disposed between the photoluminescent layerand the light absorption layer,

wherein the quantum dot polymer composite includes a first polymermatrix and a plurality of quantum dots dispersed in the first polymermatrix, and the plurality of quantum dots are configured to absorbexcitation light and emits light in a longer wavelength than thewavelength of the excitation light; and

the absorptive color-filter material is dispersed in a second polymermatrix, and the absorptive color-filter material is configured to absorbthe excitation light that passes through the photoluminescent layer andto transmit the light emitted from the plurality of quantum dots.

The silicon containing layer may have a first surface contacting thephotoluminescent layer and a second surface opposite to the firstsurface and the light absorption layer may be disposed directly on thesecond surface of the silicon containing layer.

The light absorption layer may have a first surface facing thephotoluminescent layer and a second surface opposite to the firstsurface and the layered structure may further include a lighttransmitting substrate disposed on the second surface of the lightabsorption layer.

The quantum dot polymer composite may include at least one repeatingsection configured to emit light having a predetermined wavelength.

The repeating section may include a first section configured to emit afirst light and a second section configured to emit a second light thatis different from the first light.

The light absorption layer may be patterned to have a first absorptionsection and a second absorption section corresponding to the firstsection and the second section, respectively, and the first absorptionsection may be configured to transmit at least the first light and thesecond absorption section may be configured to transmit at least thesecond light.

The first polymer matrix may include a cross-linked polymer, acarboxylic acid group-containing binder polymer, or a combinationthereof.

The cross-linked polymer may include a thiolene resin, a cross-linkedpoly(meth)acrylate, a cross-linked polyurethane, a cross-linked epoxyresin, a cross-linked vinyl polymer, a cross-linked silicone resin, or acombination thereof.

The carboxylic acid group-containing binder polymer may include a linearcopolymer of a monomer combination including a first monomer including acarboxylic acid group and a carbon-carbon double bond, a second monomerincluding a carbon-carbon double bond and a hydrophobic moiety and notincluding a carboxylic acid group, and optionally a third monomerincluding a carbon-carbon double bond and a hydrophilic moiety and notincluding a carboxylic acid group;

a multi-aromatic ring-containing polymer having a backbone structure inwhich two aromatic rings are bound to a quaternary carbon atom that is aconstituent atom of another cyclic moiety in a main chain of thebackbone structure, and including a carboxylic acid group (—COOH); or acombination thereof.

The quantum dot may include a Group II-VI compound, a Group III-Vcompound, a Group IV-VI compound, a Group IV element or compound, aGroup I-III-VI compound, a Group I-II-IV-VI compound, or a combinationthereof.

The absorptive color-filter material may include an inorganic pigment,an inorganic dye, an organic pigment, an organic dye, or a combinationthereof.

The second polymer matrix may include a (meth)acrylic polymer, athiol-ene polymer, a polyurethane, an epoxy polymer, a vinyl polymer, asilicone polymer, an imide polymer, or a combination thereof.

The silicon containing layer may include SiO_(x) wherein x is 1 to 2, anorganosilicon compound including a moiety represented by *—Si—O—Si—*wherein * is a linking portion with an adjacent atom, or a combinationthereof.

The silicon containing layer may include a deposition silica layer, aporous silica layer, a plurality of silica particles, or a combinationthereof.

The silicon containing layer may include the deposition silica layer,the porous silica layer, or a combination thereof, and may furtherinclude a first layer comprising a cross-linked polymer, wherein thedeposition silica layer, the porous silica layer, or a combinationthereof may be disposed on the first layer comprising the cross-linkedpolymer; or the silicon containing layer may include a plurality ofsilica particles and may further include a cross-linked polymer, whereinthe plurality of silica particles may be dispersed in the cross-linkedpolymer.

The silicon containing layer may include a first layer including across-linked polymer and an SiO_(x) (x is 1 to 2) containing layerdisposed on a surface of the first layer. The SiO_(x) containing layermay include a deposition silica layer, a porous silica layer, or acombination thereof.

The organosilicon compound may include a silsesquioxane compoundincluding a silsesquioxane structural unit represented by(RSiO_(3/2))_(n) (wherein, n is an integer of 1 to 20 and R is hydrogen,a C1 to C30 substituted or unsubstituted aliphatic moiety, a C3 to C30substituted or unsubstituted alicyclic moiety, a C6 to C30 substitutedor unsubstituted aromatic moiety, or a combination thereof), and thesilsesquioxane structural unit having a cage structure, a ladderstructure, a polymeric structure, or a combination thereof. Theorganosilicon compound comprising the silsesquioxane structural unit mayinclude a silsesquioxane compound comprising the silsesquioxanestructural unit.

The organosilicon compound may include at least two silsesquioxanestructural units linked by a linking group including a bond betweensulfur and carbon.

The silicon containing layer may have a silicon content of greater thanor equal to about 10 weight percent (wt %), based on a total weightthereof.

A thickness of the silicon containing layer may be greater than or equalto about 100 nm and less than or equal to 3 micrometers (μm).

The silicon containing layer may have a lower refractive index than thephotoluminescent layer and the light absorption layer.

The layered structure may exhibit color reproducibility of greater thanor equal to about 80%, based on Digital Cinema Initiatives (DCI)reference and conversion efficiency (CE) of greater than or equal toabout 20%.

An embodiment provides an electronic device including the layeredstructure.

The electronic device may be a display device, an organicelectroluminescent device, a micro LED device, a light emitting diode(LED), an image sensor, or an infrared (IR) sensor.

An embodiment provides a display device including the layered structure,wherein the display device includes

a light source and a photoluminescent color filter layer disposed on thelight source,

wherein the photoluminescent color filter layer includes the layeredstructure, and

the light source to supply incident light to the photoluminescent colorfilter layer.

The light source may include a plurality of light emitting unitscorresponding to the first section and the second section respectivelyand the light emitting unit may include a first electrode and a secondelectrode facing each other and an emission layer disposed between thefirst electrode and the second electrode.

The light source may further include a charge transport layer betweenthe first electrode and the emission layer, between the second electrodeand the emission layer, or both.

The display device may further include a lower substrate, an uppersubstrate, a polarizing plate disposed under the lower substrate, and aliquid crystal layer disposed between the upper and lower substrates,wherein the photoluminescent layer is disposed on the upper substrateand faces the liquid crystal layer, and the light source may be disposedunder the polarizing plate.

The light source may include a light emitting element (e.g., LED) andoptionally a light guide panel.

The display device may further include a polarizer between the lowersubstrate and the photoluminescent color filter layer.

The display device may exhibit color reproducibility of greater than orequal to about 80% based on DCI reference and conversion efficiency (CE)of greater than or equal to about 20%.

The layered structure according to an embodiment may contribute torealization of improved conversion efficiency and improved processstability.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic view of a cross-section of a layered structureaccording to an embodiment.

FIG. 2 is a schematic view of a cross-section of a layered structureaccording to an embodiment.

FIGS. 3A to 3B are schematic views of cross-sections of layeredstructures according to an embodiment including patterns.

FIG. 4A to 4C are schematic views illustrating various forms of across-section of an Si containing layer.

FIG. 5 shows a process of forming a photoluminescent layer including aquantum dot-polymer composite pattern on a substrate in a layeredstructure according to an embodiment.

FIG. 6A is a schematic cross-sectional view of a display deviceaccording to an embodiment.

FIG. 6B is a schematic cross-sectional view of a display deviceaccording to an embodiment.

FIG. 6C is a schematic cross-sectional view of a display device(including a liquid crystal layer) according to an embodiment.

FIG. 7 shows a result of Time-of-Flight Secondary Ion Mass Spectrometry(TOF-SIMS) analysis in Experimental Example 1.

FIG. 8 is a result of High Angle Annular Dark Field (HAADF) analysis inExperimental Example 1.

FIG. 9 shows photoluminescence spectra of the layered structure(including a light absorption layer) of Comparative Example 1 and thelayered structure (not including a light absorption layer) ofComparative Example 6 as measured in Experimental Example 2.

DETAILED DESCRIPTION

Advantages and characteristics of this disclosure, and a method forachieving the same, will become evident referring to the followingexample embodiments together with the drawings attached hereto. Theembodiments, may, however, be embodied in many different forms andshould not be construed as being limited to the embodiments set forthherein. If not defined otherwise, all terms (including technical andscientific terms) in the specification may be defined as commonlyunderstood by one skilled in the art. The terms defined in agenerally-used dictionary may not be interpreted ideally orexaggeratedly unless clearly defined. In addition, unless explicitlydescribed to the contrary, the word “comprise” and variations such as“comprises” or “comprising” will be understood to imply the inclusion ofstated elements but not the exclusion of any other elements.

Further, the singular includes the plural unless mentioned otherwise. Asused herein, when a definition is not otherwise provided, the term“substituted” may refer to replacement of hydrogen of a compound or agroup by a substituent of a C1 to C30 alkyl group, a C2 to C30 alkenylgroup, a C2 to C30 alkynyl group, a C6 to C30 aryl group, a C7 to C30alkylaryl group, a C1 to C30 alkoxy group, a C1 to C30 heteroalkylgroup, a C3 to C30 heteroalkylaryl group, a C3 to C30 cycloalkyl group,a C3 to C15 cycloalkenyl group, a C6 to C30 cycloalkynyl group, a C2 toC30 heterocycloalkyl group, a halogen (—F, —Cl, —Br, or —I), a hydroxygroup (—OH), a nitro group (—NO₂), a cyano group (—CN), an amino group(—NRR′ wherein R and R′ are independently hydrogen or a C1 to C6 alkylgroup), an azido group (—N₃), an amidino group (—C(═NH)NH₂), a hydrazinogroup (—NHNH₂), a hydrazono group (═N(NH₂)), an aldehyde group(—C(═O)H), a carbamoyl group (—C(O)NH₂), a thiol group (—SH), an estergroup (—C(═O)OR, wherein R is a C1 to C6 alkyl group or a C6 to C12 arylgroup), a carboxyl group (—COOH) or a salt thereof (—C(═O)OM, wherein Mis an organic or inorganic cation), sulfonic acid group (—SO₃H) or asalt thereof (—SO₃M, wherein M is an organic or inorganic cation), aphosphoric acid group (—PO₃H₂) or a salt thereof (—PO₃MH or —PO₃M₂,wherein M is an organic or inorganic cation), or a combination thereof.

As used herein, when a definition is not otherwise provided, the term“hetero” may refer to inclusion of at least one (e.g., 1 to 3) heteroatom of, N, O, S, Si, or P. As used herein, “alkylene group” may referto a straight or branched saturated aliphatic hydrocarbon group having avalence of at least two, optionally substituted with at least onesubstituent. As used herein, when a definition is not otherwiseprovided, “arylene group” may refer to a group having a valence of atleast two obtained by removal of at least two hydrogens in at least onearomatic ring, optionally substituted with at least one substituent. Asused herein, when a definition is not otherwise provided, “heteroarylenegroup” may include at least one substituent within a range not exceedingvalence thereof and may refer to a group having a valence of at leasttwo formed by removal of at least two hydrogen in at least oneheteroaromatic ring or at least one aliphatic ring condensed with orconnected to a heteroaromatic ring, the heteroaromatic ring including atleast one (e.g., 1 to 3) heteroatom of N, O, S, Si, P, or a combinationthereof.

In addition, “aliphatic hydrocarbon group” may refer to a C1 to C30linear or branched alkyl group, a C2 to C30 linear or branched alkenylgroup, or a C2 to C30 linear or branched alkynyl group, “aromatichydrocarbon group” may refer to a C6 to C30 aryl group or a C2 to C30heteroaryl group, and “alicyclic hydrocarbon group” may refer to a C3 toC30 cycloalkyl group, a C3 to C30 cycloalkenyl group, or a C3 to C30cycloalkynyl group.

As used herein, “(meth)acrylate” refers to acrylate and/or methacrylate.The (meth)acrylate can be a (C1 to C10 alkyl) acrylate or a (C1 to C10alkyl) methacrylate.

In the drawings, the thickness of layers, films, panels, regions, etc.,are exaggerated for clarity. Like reference numerals designate likeelements throughout the specification.

It will be understood that when an element such as a layer, film,region, or substrate is referred to as being “on” another element, itcan be directly on the other element or intervening elements may also bepresent. In contrast, when an element is referred to as being “directlyon” another element, there are no intervening elements present.

It will be understood that, although the terms “first,” “second,”“third” etc. may be used herein to describe various elements,components, regions, layers and/or sections, these elements, components,regions, layers and/or sections should not be limited by these terms.These terms are only used to distinguish one element, component, region,layer or section from another element, component, region, layer orsection. Thus, “a first element,” “component,” “region,” “layer” or“section” discussed below could be termed a second element, component,region, layer or section without departing from the teachings herein.

Furthermore, relative terms, such as “lower” or “bottom” and “upper” or“top,” may be used herein to describe one element's relationship toanother element as illustrated in the Figures. It will be understoodthat relative terms are intended to encompass different orientations ofthe device in addition to the orientation depicted in the Figures. Forexample, if the device in one of the figures is turned over, elementsdescribed as being on the “lower” side of other elements would then beoriented on “upper” sides of the other elements. The exemplary term“lower,” can therefore, encompasses both an orientation of “lower” and“upper,” depending on the particular orientation of the figure.Similarly, if the device in one of the figures is turned over, elementsdescribed as “below” or “beneath” other elements would then be oriented“above” the other elements. The exemplary terms “below” or “beneath”can, therefore, encompass both an orientation of above and below.

“About” as used herein is inclusive of the stated value and means withinan acceptable range of deviation for the particular value as determinedby one of ordinary skill in the art, considering the measurement inquestion and the error associated with measurement of the particularquantity (i.e., the limitations of the measurement system). For example,“about” can mean within one or more standard deviations, or within ±10%or 5% of the stated value.

Exemplary embodiments are described herein with reference to crosssection illustrations that are schematic illustrations of idealizedembodiments. As such, variations from the shapes of the illustrations asa result, for example, of manufacturing techniques and/or tolerances,are to be expected. Thus, embodiments described herein should not beconstrued as limited to the particular shapes of regions as illustratedherein but are to include deviations in shapes that result, for example,from manufacturing. For example, a region illustrated or described asflat may, typically, have rough and/or nonlinear features. Moreover,sharp angles that are illustrated may be rounded. Thus, the regionsillustrated in the figures are schematic in nature and their shapes arenot intended to illustrate the precise shape of a region and are notintended to limit the scope of the present claims.

As used herein, “hydrophobic moiety” refers to a moiety capable ofproviding the corresponding compound with a tendency to be agglomeratedin an aqueous solution and to repel water. For example, the hydrophobicmoiety may include an aliphatic hydrocarbon group having a carbon numberof 2 or greater (alkyl, alkenyl, alkynyl, etc.), an aromatic hydrocarbongroup having a carbon number of 6 or greater (phenyl, naphthyl, aralkylgroup, etc.), or an alicyclic hydrocarbon group having a carbon numberof 5 or greater (cyclohexyl, norbornenyl, norbornanyl, etc.).

As used herein, “visible light” may for example refer to light having awavelength of about 400 nm to about 700 nm. As used herein,“ultraviolet” or “UV” may for example refer to light having a wavelengthof greater than or equal to about 200 nm and less than about 400 nm.

As used herein, conversion efficiency (CE, %) refers to a ratio ofemission light relative to incident light. For example, conversionefficiency is a ratio of a light emission dose of a quantum dot polymercomposite relative to the light dose absorbed by the quantum dot polymercomposite from excitation light (for example, blue light). The totallight dose (B) of excitation light is obtained by integrating aphotoluminescence (PL) spectrum of the excitation light. The PL spectrumof the quantum dot composite film is measured, a dose (A) of light in agreen or red wavelength emitted from the quantum dot composite film anda dose (B′) of excitation light that passes through the quantum dotcomposite film are obtained, respectively. The conversion efficiency isobtained by the following equation:

A/(B−B′)×100=conversion efficiency (%)

Herein “dispersion” may refer to colloid-type dispersion wherein adispersed phase has a dimension of about 1 nm to several micrometers(e.g., less than or equal to about 3 μm, less than or equal to about 2μm, or less than or equal to about 1 μm).

As used herein, “Group” refers to a Group of Periodic Table.

“Group I” refers to a Group IA and a Group IB, and may include Li, Na,K, Rb, and Cs but are not limited thereto.

As used herein, “Group II” refers to Group IIA and a Group IIB, andexamples of the Group II metal may include Cd, Zn, Hg, and Mg, but arenot limited thereto.

“Group III” refers to a Group IIIA and a Group IIIB, and examples of theGroup III metal may include Al, In, Ga, and TI, but are not limitedthereto.

“Group IV” refers to a Group IVA and a Group IVB, and examples of theGroup IV metal may include Si, Ge, and Sn, but are not limited thereto.As used herein, “metal” may include a semi-metal such as Si.

“Group V” refers to Group VA and may include nitrogen, phosphorus,arsenic, antimony, and bismuth but is not limited thereto.

“Group VI” refers to Group VIA and may include sulfur, selenium, andtellurium, but is not limited thereto.

As used herein, the term “silica” may refer to a silicon oxide such as“SiO_(x) wherein x is 1 to 2”

Photoluminescence characteristics of quantum dots may be applied tovarious electronic devices such as display devices. In variouselectronic devices, replacing an absorptive color filter with a quantumdot-based color filter (e.g., a photoluminescent color filter) may bedesired. Thus, development of a technology for improvingphotoluminescence properties of a quantum dot-based color filter may bedesired.

In an embodiment, a layered structure includes a photoluminescent layerincluding a quantum dot polymer composite; a light absorption layerdisposed on the photoluminescent layer and including an absorptivecolor-filter material; and a silicon containing layer disposed betweenthe photoluminescent layer and the light absorption layer. Referring toFIG. 1, in an embodiment, a light absorption layer 3 is disposed on aphotoluminescent layer 1 and a silicon containing layer 2 is disposedtherebetween. The silicon containing layer 2 may have a first surfacecontacting the photoluminescent layer 1 and a second surface opposite tothe first surface and the light absorption layer 3 may be disposeddirectly on the second surface of the silicon containing layer.

The light absorption layer may have a first surface facing thephotoluminescent layer (e.g., facing or contacting the siliconcontaining layer) and a second surface opposite to the first surface. Alight transmitting substrate may be disposed on (for example, directlyon) the second surface of the light absorption layer. Referring to FIG.2, the light absorption layer 3 is disposed on the photoluminescentlayer 1, a silicon containing layer 2 is disposed therebetween, thefirst surface of the light absorption layer faces the photoluminescentlayer, and a light transmitting substrate 4 is on the second surfaceopposed to the first surface of the light absorption layer.

The light transmitting substrate may be a substrate including aninsulation material. The light transmitting substrate may be transparentfor visible light. Herein, “transparent” refers to the case where alight transmittance for the corresponding light is greater than or equalto about 80%, for example, greater than or equal to about 85%, greaterthan or equal to about 90%, or greater than or equal to about 95%. Thesubstrate may be silica-based glass; polyester such as polyethyleneterephthalate (PET) and polyethylene naphthalate (PEN), various polymerssuch as polyimide, polyamide-imide, polycarbonate, andpoly(meth)acrylate; an inorganic material such as Al₂O₃ or ZnO; or acombination thereof, but is not limited thereto. A thickness of thelight transmitting substrate may be appropriately selected considering asubstrate material but is not particularly limited. The lighttransmitting substrate may have flexibility. The substrate may bedisposed on the second surface of the light absorption layer. Thesubstrate may have a lower refractive index than the light absorptionlayer.

The quantum dot polymer composite included in the photoluminescent layermay include at least one repeating section configured to emit lighthaving a predetermined wavelength. In an embodiment, the repeatingsection may include a first section (R) configured to emit a first light(e.g., red light) and a second section (G) configured to emit a secondlight (e.g., green light) that is different from the first light, andthe light absorption layer may be patterned to have a first absorptionsection, a second absorption section, or both corresponding to the firstsection, the second section, or both. The first absorption section andthe second absorption section may transmit at least the first light andat least the second light, respectively. For example, the firstabsorption section may transmit the first light (e.g., the red light)and block light having a wavelength outside the wavelength range of thefirst light (e.g., block the green light and/or blue light). The secondabsorption section may transmit the second light (e.g., the green light)and block light having a wavelength outside the wavelength range of thesecond light (e.g., block the red light and/or blue light).

Referring to FIGS. 3A and 3B, the photoluminescent layer may include ared (R) section of a quantum dot polymer composite configured to emitred light and a green (G) section of a quantum dot polymer compositeconfigured to emit green light, and the light absorption layer may bepatterned to correspond to each of the R section and the G section orcorrespond to the R section and the G section together. Thephotoluminescent layer may include a blue (B) section of a quantum dotpolymer composite configured to emit blue light. Alternatively, thephotoluminescent layer may not include a quantum dot at a portioncorresponding to the B section so as to transmit blue light (excitationlight).

The first light may have a first peak wavelength (e.g., maximumphotoluminescence peak wavelength) in a range of about 580 nm to about650 nm (e.g., about 620 nm to about 650 nm). The first section may bethe R section to emit red light. The second light may have a second peakwavelength in a range of about 480 nm to about 580 nm (e.g., about 500nm to about 560 nm). The second section may be the G section to emitgreen light. The photoluminescent layer may include a third section toemit/pass third light. The third section may include a quantum dot ormay not include a quantum dot. The third light may have a third peakwavelength in a range of about 380 nm to about 480 nm (e.g., about 440nm to about 480 nm). The third light may be the excitation light but isnot limited thereto.

The quantum dot may have a theoretical quantum yield (QY) of 100% andmay emit light having high color purity (e.g., a full width at halfmaximum (FWHM) of less than or equal to about 40 nm). The quantum dotpolymer composite or a pattern thereof, and a layered structureincluding the same may have potential utility as a color filter, forexample a photoluminescent color filter in various electronic devicessuch as a liquid crystal display. A liquid crystal display device mayinclude a backlight unit, a liquid crystal layer, and an absorptivecolor filter. In this device, white light emitted from the backlightunit passes through the liquid crystal layer and reaches the absorptivecolor filter, and then, light having a predetermined wavelength passesthrough a color filter (RGB) formed corresponding to each pixel, whilethe other light is absorbed therein and thus realizes a predeterminedcolor in each pixel. The absorptive color filter may hardly avoid asubstantial degradation of luminous efficiency in principle. Inaddition, as the light has linearity when the light passes liquidcrystals, the LCD device has a limit in a viewing angle which it mayrealize.

However, in a display (e.g., liquid crystal display) device adopting aquantum dot-based photoluminescent color filter, an external lightsource (e.g., a backlight unit) emits excitation light (e.g., blue lightor UV) capable of exciting a quantum dot instead of white light, aphotoluminescent color filter including a quantum dot is disposed on apanel of the display device (e.g., over a liquid crystal layer or anupper substrate), and each pixel emits light of a predeterminedwavelength.

Since a photoconversion by the quantum dot occurs in or over the upperpart of the panel, light passing a liquid crystal layer and havinglinearity may proceed in all directions when the light passes through acolor filter and thereby overcome a viewing angle related drawback fromwhich an absorptive color filter-based display device may suffer. Inaddition, the quantum dot-based photoluminescent color filter may avoida loss of light resulting from the absorptive color filter. In thedisplay device including the quantum dot-based photoluminescent colorfilter, the converted light proceeds in the all directions, and anin-cell type polarizer (ICP) structure of disposing a polarizer betweenthe color filter and the liquid crystal layer may be required. In caseof the display device having a quantum dot-based color filter,excitation light not converted in the color filter and proceeding towardand being emitted from the front surface of the upper substrate maybecome a problem and accordingly, a color reproducibility of a devicemay sharply decrease and in some cases, it may not be possible torealize a desired color. Therefore, developing a technology of achievinga required level of color reproducibility for a display device includingthe quantum dot-based color filter may be desirable.

In order to handle this problem, a blue cut filter (BCF) may be adoptedto prevent/suppress emission of excitation light (e.g., blue light).However, the blue cut filter typically includes a layered structure oflayers made of materials having a different refractive index and therebyreflects blue light. Such a structure of the blue cut filter requires aprocess of stacking and patterning multi-layered high quality (i.e.,defectless) inorganic thin film layers and thus may sharply increase amanufacturing cost of the device including the quantum dot-based colorfilter. In addition, the blue cut filter having a multi-layer structuremay increase a reflection of external light and thus seriouslydeteriorate a contrast of the display device and thus may result in adecrease in clarity or contrast ratio of the display device.

The layered structures according to an embodiment have theaforementioned structure and thereby may solve these problems. In thelayered structure according to an embodiment, a light absorption layerincluding an absorptive color-filter material is disposed on aphotoluminescent layer including a quantum dot polymer composite and asilicon containing layer is disposed between the photoluminescent layerand the light absorption layer. The absorptive color-filter materialdispersed in a second polymer matrix is configured to absorbnon-converted excitation light that passes through the photoluminescentlayer and to transmit the light emitted from the plurality of quantumdots. Through such a structure, the layered structure according to anembodiment may achieve improved color purity and contrast simultaneouslyand may also achieve technical effects (e.g., improved luminousefficiency and wide viewing angle) of quantum dot-based color filter.

The quantum dot polymer composite included in the photoluminescent layerincludes a first polymer matrix and the plurality of quantum dotsdispersed in the first polymer matrix. The plurality of quantum dots areconfigured to absorb excitation light (e.g., blue light having a maximumphotoluminescence peak wavelength of about 430 nm to about 470 nm orgreen light having a maximum photoluminescence peak wavelength of about510 nm to about 550 nm) and to emit light (e.g., the first light and thesecond light) in a longer wavelength than the excitation light (that is,lower energy than that of the excitation light).

The first polymer matrix may include a cross-linked polymer, acarboxylic acid group-containing binder polymer, or a combinationthereof. The cross-linked polymer may be a polymer cross-linked bylight.

The cross-linked polymer may include a thiol-ene resin, a cross-linkedpoly(meth)acrylate, a cross-linked polyurethane, a cross-linked epoxyresin, a cross-linked vinyl polymer, a cross-linked silicone resin, or acombination thereof. The cross-linked polymer may be a copolymer.

The cross-linked polymer may be a polymerization product of acombination including a photopolymerizable compound (e.g., a monomer oran oligomer) having one or more, for example, two, three, four, five,six, or more photopolymerizable functional groups (e.g., carbon-carbondouble bonds such as (meth)acrylate groups or vinyl groups, epoxygroups, etc.). The photopolymerizable compound may be aphotopolymerizable monomer or oligomer that may be used in aphotosensitive resin composition.

In an embodiment, the photopolymerizable compound may include anethylenic unsaturated monomer such as a (meth)acrylate monomer or avinyl monomer; a reactive oligomer having two or more photopolymerizablemoieties (e.g., epoxy groups, vinyl groups, etc.) (e.g., oligomer of avinyl compound, an ethylene oligomer, alkylene oxide oligomer, etc.); acopolymer of the reactive oligomer and the ethylenic unsaturatedmonomer, a urethane oligomer having two or more photopolymerizablemoieties (e.g., (meth)acrylate moieties); a siloxane oligomer having twoor more photopolymerizable moieties; or a combination thereof. Thephotopolymerizable compound may further include a thiol compound havingat least two thiol groups at both terminal ends. The photopolymerizablecompound may be commercially available or may be synthesized. Thecross-linked polymer may be a polymerization product of a mixtureincluding the photopolymerizable compound.

The (meth)acrylate monomer may include a monofunctional ormulti-functional ester of (meth)acrylic acid having at least onecarbon-carbon double bond. The (meth)acrylate monomer may include adi(meth)acrylate compound, a tri(meth)acrylate compound, atetra(meth)acrylate compound, a penta(meth)acrylate compound, ahexa(meth)acrylate compound, or a combination thereof. Examples of theacrylate monomer may be an alkyl (meth)acrylate, ethylene glycoldi(meth)acrylate, triethylene glycol di(meth)acrylate, diethylene glycoldi(meth)acrylate, 1,4-butanediol di(meth)acrylate, 1,6-hexanedioldi(meth)acrylate, neopentylglycol di(meth)acrylate, pentaerythritoldi(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritoltetra(meth)acrylate, dipentaerythritol di(meth)acrylate,dipentaerythritol tri(meth)acrylate, dipentaerythritolpenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, bisphenol Aepoxy (meth)acrylate, bisphenol A di(meth)acrylate, trimethylolpropanetri(meth)acrylate, novolac epoxy (meth)acrylate,ethylglycolmonomethylether (meth)acrylate, tris(meth)acryloyloxyethylphosphate, dipropylene glycol di(meth)acrylate, tripropylene glycoldi(meth)acrylate, or propylene glycol di(meth)acrylate, but are notlimited thereto.

The multi-thiol compound having at least two thiol groups at bothterminal ends may be a compound represented by Chemical Formula 1:

wherein,

R¹ is hydrogen; a substituted or unsubstituted C1 to C30 linear orbranched alkyl group; a substituted or unsubstituted C6 to C30 arylgroup; a substituted or unsubstituted C7 to C30 arylalkyl group; asubstituted or unsubstituted C3 to C30 heteroaryl group; a substitutedor unsubstituted C3 to C30 heteroarylalkyl group; a substituted orunsubstituted C3 to C30 cycloalkyl group; a substituted or unsubstitutedC2 to C30 heterocycloalkyl group; C1 to C10 alkoxy group; hydroxy group;—NH₂; a substituted or unsubstituted C1 to C30 amine group (—NRR′,wherein R and R′ are independently hydrogen or C1 to C30 linear orbranched alkyl group, but simultaneously not hydrogen); an isocyanategroup; a halogen; —ROR′ (wherein R is a substituted or unsubstituted C1to C20 alkylene group and R′ is hydrogen or a C1 to C20 linear orbranched alkyl group); an acyl halide (—RC(═O)X, wherein R is asubstituted or unsubstituted alkylene group and X is a halogen);—C(═O)OR′ (wherein R′ is hydrogen or a C1 to C20 linear or branchedalkyl group); —CN; —C(═O)NRR′ (wherein R and R′ are independentlyhydrogen or a C1 to C20 linear or branched alkyl group); —C(═O)ONRR′(wherein R and R′ are independently hydrogen or a C1 to C20 linear orbranched alkyl group); or a combination thereof,

L₁ is a carbon atom, a substituted or unsubstituted C1 to C30 alkylenegroup, a substituted or unsubstituted C2 to C30 alkylene group whereinat least one methylene (—CH₂—) is replaced by sulfonyl (—SO₂—), carbonyl(CO), ether (—O—), sulfide (—S—), sulfoxide (—SO—), ester (—C(═O)O—),amide (—C(═O)NR—) (wherein R is hydrogen or a C1 to C10 alkyl group), ora combination thereof, a substituted or unsubstituted C3 to C30cycloalkylene group, a substituted or unsubstituted C6 to C30 arylenegroup, a substituted or unsubstituted C3 to C30 heteroarylene group, ora substituted or unsubstituted C3 to C30 heterocycloalkylene group,

Y₁ is a single bond; a substituted or unsubstituted C1 to C30 alkylenegroup; a substituted or unsubstituted C2 to C30 alkenylene group; or asubstituted or unsubstituted C2 to C30 alkylene group or a substitutedor unsubstituted C3 to C30 alkenylene group wherein at least onemethylene (—CH₂—) is replace by sulfonyl (—S(═O)₂—), carbonyl (—C(═O)—),ether (—O—), sulfide (—S—), sulfoxide (—S(═O)—), ester (—C(═O)O—), amide(—C(═O)NR—) (wherein R is hydrogen or a C1 to C10 linear or branchedalkyl group), imine (—NR—) (wherein R is hydrogen or a C1 to C10 linearor branched alkyl group), or combination thereof,

m is an integer of 1 or more,

k1 is 0 or an integer of 1 or more, k2 is an integer of 1 or more, and

the sum of m and k2 is an integer of 3 or more,

provided that when Y₁ is not a single bond, m does not exceed thevalence of Y₁ and

provided that the sum of k1 and k2 does not exceed the valence of L₁.

The multi-thiol compound may include a compound represented by ChemicalFormula 1-1:

Herein, L₁′ is carbon; a substituted or unsubstituted C2 to C20 alkylenegroup; a substituted or unsubstituted C6 to C30 arylene group; asubstituted or unsubstituted C3 to C30 heteroarylene group; asubstituted or unsubstituted C3 to C30 cycloalkylene group; or asubstituted or unsubstituted C3 to C30 heterocycloalkylene group,

Y_(a) to Y_(d) are independently a single bond; a substituted orunsubstituted C1 to C30 alkylene group; a substituted or unsubstitutedC2 to C30 alkenylene group; or a substituted or unsubstituted C2 to C30alkylene group or a substituted or unsubstituted C3 to C30 alkenylenegroup wherein at least one methylene (—CH₂—) is replaced by sulfonyl(—S(═O)₂—), carbonyl (—C(═O)—), ether (—O—), sulfide (—S—), sulfoxide(—S(═O)—), ester (—C(═O)O—), amide (—C(═O)NR—) (wherein R is hydrogen ora C1 to C10 linear or branched alkyl group), imine (—NR—) (wherein R ishydrogen or a C1 to C10 linear or branched alkyl group) or a combinationthereof, and

R_(a) to R_(d) are independently R¹ of Chemical Formula 1 or SH,provided that at least two of R_(a) to R_(d) are SH.

The multi-thiol compound may be a dithiol compound, a trithiol compound,a tetrathiol compound, or a combination thereof. The multi-thiolcompound may include ethoxylated pentaerythritol tetra(3-mercaptopropionate), trimethylolpropane tri(3-mercaptopropionate),trimethylolpropane tri(2-mercaptoacetate), glycoldi-3-mercaptopropionate (e.g., C2-C10 alkylene glycoldi-3-mercaptopropionate, such as ethylene glycoldi-3-mercaptopropionate), polypropylene glycol di(3-mercaptopropionate),ethoxylated trimethylpropane tri(3-mercaptopropionate), glycoldimercaptoacetate (e.g., C2-C10 alkylene glycol dimercaptoacetate, suchas ethylene glycol dimercaptoacetate), ethoxylated glycoldimercaptoacetate (e.g., ethoxylated C2-C10 alkylene glycoldi-3-mercaptopropionate, such as ethoxylated ethylene glycoldi-3-mercaptopropionate), 1,4-bis(3-mercaptobutyryloxy)butane, trimethylolpropane tris(3-mercaptopropionate),tris[2-(3-mercaptopropinonyloxy)ethyl] isocyanurate,1,3,5-tris(3-mercaptobutyloxyethyl)-1,3,5-triazine-2,4,6(1H,3H,5H)-trione,pentaerythritol tetrakis(3-mercaptopropionate), pentaerythritoltetrakis(2-mercaptoacetate), 1,6-hexanedithiol, 1,3-propanedithiol,1,2-ethanedithiol, polyethylene glycol dithiol including 1 to 10ethylene glycol repeating units, or a combination thereof. A reactionbetween the thiol compound and the ethylenic unsaturated monomer mayprovide a thiol-ene resin.

The carboxylic acid group-containing binder polymer may include

a linear copolymer of a monomer combination including a first monomerincluding a carboxylic acid group and a carbon-carbon double bond, asecond monomer including a carbon-carbon double bond and a hydrophobicmoiety and not including a carboxylic acid group, and optionally a thirdmonomer including a carbon-carbon double bond and a hydrophilic moietyand not including a carboxylic acid group;

a multi-aromatic ring-containing polymer having a backbone structure inwhich two aromatic rings are bound to a quaternary carbon atom that is aconstituent atom of another cyclic moiety in the main chain of thebackbone structure, and including a carboxylic acid group (—COOH); or

a combination thereof.

Examples of the first monomer may include carboxylic acid vinyl estercompounds such as acrylic acid, methacrylic acid, maleic acid, itaconicacid, fumaric acid, 3-butenoic acid, vinyl acetate, or vinyl benzoate,but are not limited thereto. The first monomer may be at least onecompound, e.g., two or more different compounds.

Examples of the second monomer may be an alkenyl aromatic compound suchas styrene, alpha-methyl styrene, vinyl toluene, or vinyl benzyl methylether; a unsaturated carboxylic acid ester compound such as methylacrylate, methyl methacrylate, ethyl acrylate, ethyl methacrylate, butylacrylate, butyl methacrylate, benzyl acrylate, benzyl methacrylate,cyclohexyl acrylate, cyclohexyl methacrylate, phenyl acrylate, or phenylmethacrylate; unsaturated carboxylic acid amino alkyl ester compoundsuch as 2-amino ethyl acrylate, 2-amino ethyl methacrylate, 2-dimethylamino ethyl acrylate, or 2-dimethyl amino ethyl methacrylate; maleimidessuch as N-phenylmaleimide, N-benzylmaleimide, N-alkylmaleimide; aunsaturated carboxylic acid glycidyl ester compound such as glycidylacrylate or glycidyl methacrylate; a vinyl cyanide compound such asacrylonitrile, methacrylonitrile; or a unsaturated amide compound suchas acryl amide or methacryl amide, but are not limited thereto. As thesecond monomer, at least one compound, e.g., two or more differentcompounds, may be used.

Examples of the third monomer may include 2-hydroxy ethyl acrylate,2-hydroxy ethyl methacrylate, 2-hydroxy butyl acrylate, or 2-hydroxybutyl methacrylate, but are not limited thereto. As the third monomer,at least one compound, e.g., two or more different compounds, may beused.

The copolymer (also referred to as the carboxylic acid group-containingpolymer) may include a first repeating unit derived from the firstmonomer, a second repeating unit derived from the second monomer, andoptionally a third repeating unit derived from the third monomer. In thecopolymer, a content of the first repeating unit may be greater than orequal to about 10 mole percent (mol %), for example, greater than orequal to about 15 mol %, greater than or equal to about 25 mol %, orgreater than or equal to about 35 mol %. In the carboxylic acid groupcontaining polymer, a content of the first repeating unit may be lessthan or equal to about 90 mol %, for example, less than or equal toabout 89 mol %, less than or equal to about 80 mol %, less than or equalto about 70 mol %, less than or equal to about 60 mol %, less than orequal to about 50 mol %, less than or equal to about 40 mol %, less thanor equal to about 35 mol %, or less than or equal to about 25 mol %.

In the copolymer, a content of the second repeating unit may be greaterthan or equal to about 10 mol %, for example, greater than or equal toabout 15 mol %, greater than or equal to about 25 mol %, or greater thanor equal to about 35 mol %. In the copolymer, a content of the secondrepeating unit may be less than or equal to about 90 mol %, for example,less than or equal to about 89 mol %, less than or equal to about 80 mol%, less than or equal to about 70 mol %, less than or equal to about 60mol %, less than or equal to about 50 mol %, less than or equal to about40 mol %, less than or equal to about 35 mol %, or less than or equal toabout 25 mol %.

In the carboxylic acid group-containing binder polymer, if present, acontent of the third repeating unit may be greater than or equal toabout 1 mol %, for example, greater than or equal to about 5 mol %,greater than or equal to about 10 mol %, or greater than or equal toabout 15 mol %. In the binder polymer, a content of the third arepeating unit may be less than or equal to about 30 mol %, for example,less than or equal to about 25 mol %, less than or equal to about 20 mol%, less than or equal to about 18 mol %, less than or equal to about 15mol %, or less than or equal to about 10 mol %.

The copolymer may be a copolymer of (meth)acrylic acid and at least onesecond/third monomer of aryl or alkyl (meth)acrylate, hydroxyalkyl(meth)acrylate, or styrene. For example, the binder polymer may be a(meth)acrylic acid/methyl (meth)acrylate copolymer, a (meth)acrylicacid/benzyl (meth)acrylate copolymer, a (meth)acrylic acid/benzyl(meth)acrylate/styrene copolymer, a (meth)acrylic acid/benzyl(meth)acrylate/2-hydroxy ethyl (meth)acrylate copolymer, a (meth)acrylicacid/benzyl (meth)acrylate/styrene/2-hydroxy ethyl (meth)acrylatecopolymer, or a combination thereof.

The carboxylic acid group-containing binder polymer may include amulti-aromatic ring-containing polymer. The multi-aromaticring-containing polymer has a backbone structure in which two aromaticrings are bound to a quaternary carbon atom that is a constituent atomof another cyclic moiety in the main chain of the backbone structure,(e.g., being bound to the main chain) and includes a carboxylic acidgroup (—COOH).

In the multi-aromatic ring-containing polymer, the backbone structuremay include a unit represented by Chemical Formula A:

wherein, * is a linking portion with an adjacent atom of the main chainof the binder, and Z₁ is a linking moiety represented by any one ofChemical Formulae A-1 to A-6, and in Chemical Formulae A-1 to A-6, * isa linking portion with an aromatic moiety:

wherein, R^(a) is a hydrogen, an ethyl group, C₂H₄Cl, C₂H₄OH, CH₂CH═CH₂,or a phenyl group.

The multi-aromatic ring-containing polymer may include a structural unitrepresented by Chemical Formula B:

wherein Z¹ is a linking moiety represented by any one of ChemicalFormulae A-1 to A-6,

each L is the same or different and each is independently a single bond,a C1 to C10 alkylene, a C1 to C10 alkylene having a substituentincluding a carbon-carbon double bond, a C1 to C10 oxy alkylene, or a C1to C10 oxy alkylene having a substituent including a carbon-carbondouble bond,

R¹ and R² are independently a hydrogen atom, a halogen atom, or asubstituted or unsubstituted C1 to C20 alkyl group,

m1 and m2 are independently an integer ranging from 0 to 4, each A isthe same or different and each is independently —NH—, —O—, a C1 to C10alkylene, or a combination thereof, and

Z² is a C6 to C40 aromatic hydrocarbon group.

In Chemical Formula B, Z² may be any one of Chemical Formula B-1,Chemical Formula B-2 and Chemical Formula B-3:

wherein * is a linking portion with an adjacent carbonyl carbon,

wherein * is a linking portion with carbonyl carbon,

wherein * is a linking portion with an adjacent carbonyl carbon, L is asingle bond, —O—, —S—, —C(═O)—, —CH(OH)—, —S(═O)₂—, —Si(CH₃)₂—,(CH₂)_(p) (wherein 1≤p≤10), (CF₂)_(q) (wherein 1≤q≤10), —CR₂— (wherein Ris independently hydrogen, a C1 to C10 aliphatic hydrocarbon group, a C6to C20 aromatic hydrocarbon group, or a C6 to C20 alicyclic hydrocarbongroup), —C(CF₃)₂—, —C(CF₃)(C6H₅)—, or —C(═O)NH—.

The multi-aromatic ring-containing polymer may include a structural unitrepresented by Chemical Formula C:

wherein each of R¹ and R² is independently hydrogen or a substituted orunsubstituted (meth)acryloyloxyalkyl group,

R³ and R⁴ are independently hydrogen, a halogen, or a substituted orunsubstituted C1 to C20 alkyl group,

Z¹ is a linking moiety represented by Chemical Formulae A-1 to A-6,

Z² is an aromatic hydrocarbon group such as the moieties represented byany one of Chemical Formula B-1, Chemical Formula B-2 and ChemicalFormula B-3 above, and

m1 and m2 are independently an integer ranging from 0 to 4, and

* is a linking portion with an adjacent atom.

In an embodiment, the multi-aromatic ring-containing polymer may be anacid adduct of bisphenol fluorene epoxy acrylate. For example, thebisphenol fluorene epoxy acrylate may be prepared by reacting4,4-(9-fluorenylidene)-diphenol and epichlorohydrin to obtain an epoxycompound having a fluorene moiety, and the epoxy compound is reactedwith an acrylic acid to obtain a fluorenyl epoxy acrylate, which is thenfurther reacted with biphenyldianhydride and/or phthalic anhydride ortetrahydrophthalic anhydride. The Reaction Scheme may be summarized asbelow:

The multi-aromatic ring-containing polymer may include a functionalgroup represented by Chemical Formula D at one or both terminal ends:

wherein, in Chemical Formula D, Z³ is a moiety represented by one ofChemical Formulae D-1 to D-7, and * is a linking portion with anadjacent atom:

wherein, R^(b) and R^(c) are independently a hydrogen atom, asubstituted or unsubstituted C1 to C20 alkyl group, or a substituted orunsubstituted C2 to C20 alkyl group in which at least one methylene isreplaced by an ester group, an ether group, or a combination thereof;

wherein, R^(d) is O, S, NH, a substituted or unsubstituted C1 to C20alkylene group, a C1 to C20 alkylamine group, or a C2 to C20alkenylamine group.

The multi-aromatic ring-containing polymer may be synthesized orcommercially available (e.g., from Nippon Steel Chemical Co., Ltd.).

The multi-aromatic ring-containing polymer may include a moiety derivedfrom a reaction product of a fluorene compound of9,9-bis(4-hydroxyphenyl)fluorene, 9,9-bis(4-aminophenyl)fluorene,9,9-bis[4-(glycidyloxy)phenyl]fluorene, or9,9-bis[4-(2-hydroxyethoxy)phenyl]fluorene with an appropriate compoundcapable of reacting with the fluorene compound (e.g., an aromaticdianhydride of 9,9-bis-(3,4-dicarboxyphenyl)fluorene dianhydride,pyromellitic dianhydride (PMDA), biphenyltetracarboxylic dianhydride(BPDA), benzophenone tetracarboxylic dianhydride, or naphthalenetetracarboxylic dianhydride, a C2 to C30 diol compound,epichlorohydrine, or the like).

The fluorene compound, dianhydride, diol compound, and the like arecommercially available, and the reaction conditions therebetween may bereadily discerned by one of skill in the art.

An acid value of the carboxylic acid group-containing polymer (binder)may be greater than or equal to about 50 milligrams of potassiumhydroxide (KOH) per gram (mg KOH/g). For example, the carboxylic acidgroup-containing polymer have an acid value of greater than or equal toabout 60 mg KOH/g, greater than or equal to about 70 mg KOH/g, greaterthan or equal to about 80 mg KOH/g, greater than or equal to about 90 mgKOH/g, greater than or equal to about 100 mg KOH/g, greater than orequal to about 110 mg KOH/g, greater than or equal to about 120 mgKOH/g, greater than or equal to about 125 mg KOH/g, or greater than orequal to about 130 mg KOH/g. The acid value of the polymer may be forexample less than or equal to about 250 mg KOH/g, less than or equal toabout 240 mg KOH/g, less than or equal to about 230 mg KOH/g, less thanor equal to about 220 mg KOH/g, less than or equal to about 210 mgKOH/g, less than or equal to about 200 mg KOH/g, less than or equal toabout 190 mg KOH/g, less than or equal to about 180 mg KOH/g, or lessthan or equal to about 160 mg KOH/g, but is not limited thereto.

The quantum dot (hereinafter, referred to as a semiconductornanocrystal) disposed (e.g., dispersed) in the first polymer matrix isnot particularly limited and may be commercially available. For example,the quantum dot may include a Group II-VI compound, a Group III-Vcompound, a Group IV-VI compound, a Group IV element or compound, aGroup compound, a Group I-II-IV-VI compound, or a combination thereof.The quantum dot may not include cadmium, lead, or a combination thereof.

The Group II-VI compound may be a binary element compound of CdSe, CdTe,ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, or a combinationthereof; a ternary element compound of CdSeS, CdSeTe, CdSTe, ZnSeS,ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS,CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, or a combinationthereof; or a quaternary element compound of ZnSeSTe, HgZnTeS, CdZnSeS,CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe,HgZnSTe, or a combination thereof. The Group II-VI compound may furtherinclude Group III metal.

The Group III-V compound may be a binary element compound of GaN, GaP,GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, or a combinationthereof; a ternary element compound of GaNP, GaNAs, GaNSb, GaPAs, GaPSb,AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, or acombination thereof; or a quaternary element compound of GaAlNP,GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs,GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, or a combinationthereof. The Group III-V compound may further include a Group II metal(e.g., InZnP)

The Group IV-VI compound may be a binary element compound of SnS, SnSe,SnTe, PbS, PbSe, PbTe, or a combination thereof; a ternary elementcompound of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe,SnPbTe, or a combination thereof; or a quaternary element compound ofSnPbSSe, SnPbSeTe, SnPbSTe, or a combination thereof.

Examples of the Group compound may include CuInSe₂, CuInS₂, CuInGaSe,and CuInGaS, but are not limited thereto. Examples of the GroupI-II-IV-VI compound may include CuZnSnSe and CuZnSnS, but are notlimited thereto.

The Group IV element or compound may include an elementary substanceselected from Si, Ge, or a combination thereof; or a binary elementcompound selected from SiC, SiGe, or a combination thereof.

The binary element compound, the ternary element compound, or thequaternary element compound respectively exist in a uniformconcentration in the particle or partially different concentrations inthe same particle. The semiconductor nanocrystal may have a core/shellstructure wherein a second semiconductor nanocrystal having a differentcomposition from a first semiconductor nanocrystal is disposed on a coreincluding the first semiconductor nanocrystal. An alloy interlayer mayor may not exist on the interface between the core and the shell. Whenthe alloy interlayer is present, the interface between the core and theshell may have a concentration gradient wherein a concentration of anelement of the shell is changed in a radial direction (e.g., increasedor decreased toward the core). The shell may include a multi-layeredshell having at least two layers. In the multi-layered shell, each layermay have a single composition or a composition having an alloy or aconcentration gradient, but is not limited thereto.

In the core-shell semiconductor nanocrystal, the shell may have a largerenergy bandgap than the core or vice versa. In the multi-layered shell,an outer shell of a core may have a greater energy bandgap than a shellnear to a core, but is not limited thereto.

The quantum dot may have a size (e.g., a particle diameter or in thecase of non-spherically shaped particle, a diameter calculated from atwo-dimensional area confirmed by an electron microscopy analysis) ofabout 1 nm to about 100 nm. In an embodiment, the quantum dot may have aparticle size (the longest dimension for a non-spherically shapedparticle) of about 1 nm to about 20 nm, for example, 2 nm (or 3 nm) to15 nm. In an embodiment, the quantum dot may have a particle diameter ofgreater than or equal to about 2 nm, greater than or equal to about 3nm, greater than or equal to about 4 nm, or greater than or equal toabout 5 nm. The quantum dot may have a particle size of less than orequal to about 50 nm, less than or equal to about 45 nm, less than orequal to about 40 nm, less than or equal to about 35 nm, less than orequal to about 30 nm, less than or equal to about 25 nm, less than orequal to about 20 nm, less than or equal to about 15 nm, less than orequal to about 10 nm, less than or equal to about 9 nm, less than orequal to about 8 nm, or less than or equal to about 7 nm.

In addition, a shape of the quantum dot is not particularly limited. Forexample, the quantum dot may include a spherical, oval, pyramidal,multi-armed, or cube nanoparticle, nanotube, nanowire, nanofiber,nanosheet, or a combination thereof.

In addition, the quantum dot may be commercially available or may besynthesized in a suitable method. For example, a nano-sized quantum dot,e.g., having a diameter of less than or equal to about 10 nm, may besynthesized by a wet chemical process. In the wet chemical process,precursor materials react in an organic solvent to grow crystalparticles and the organic solvent or a ligand compound may naturallycoordinate to the surface of the quantum dot, controlling the growth ofthe crystal. Examples of the organic solvent and the ligand compound maybe readily discerned by one of skill in the art. The organic solventcoordinated on, e.g., bound to, the surface of the quantum dot mayaffect stability of a device, and thus excess organic materials that arenot coordinated on the surface of the nanocrystals may be removed bypouring a reacted solution in excess non-solvent, and centrifuging theresulting mixture. Examples of the non-solvent may be acetone, ethanol,methanol, and the like, but are not limited thereto.

The quantum dot may have an organic ligand bound to a surface of thequantum dot. The organic ligand may have a hydrophobic moiety. In anembodiment, the organic ligand may include RCOOH, RNH₂, R₂NH, R₃N, RSH,R₃PO, R₃P, ROH, RCOOR′, RPO(OH)₂, RHPOOH, RHPOOH (wherein, R and R′ areindependently a substituted or unsubstituted C5 to C24 aliphatichydrocarbon group, for example, a substituted or unsubstituted alkyl oralkenyl, or a substituted or unsubstituted C6 to C20 aromatichydrocarbon group, for example, an aryl group), a polymer organicligand, or a combination thereof.

Examples of the organic ligand may include thiol compounds such asmethane thiol, ethane thiol, propane thiol, butane thiol, pentane thiol,hexane thiol, octane thiol, dodecane thiol, hexadecane thiol, octadecanethiol, or benzyl thiol; amines such as methane amine, ethane amine,propane amine, butane amine, pentyl amine, hexyl amine, octyl amine,nonylamine, decylamine, dodecyl amine, hexadecyl amine, octadecyl amine,dimethyl amine, diethyl amine, dipropyl amine, tributylamine, ortrioctylamine; carboxylic acid compounds such as methanoic acid,ethanoic acid, propanoic acid, butanoic acid, pentanoic acid, hexanoicacid, heptanoic acid, octanoic acid, dodecanoic acid, hexadecanoic acid,octadecanoic acid, oleic acid, or benzoic acid; phosphine compounds suchas methyl phosphine, ethyl phosphine, propyl phosphine, butyl phosphine,pentyl phosphine, octylphosphine, dioctyl phosphine, tributylphosphine,trioctylphosphine diphenyl phosphine, triphenyl phosphine; phosphineoxide compounds such as methyl phosphine oxide, ethyl phosphine oxide,propyl phosphine oxide, butyl phosphine oxide, pentyl phosphine oxide,tributyl phosphine oxide, octylphosphine oxide, dioctyl phosphine oxide,or trioctyl phosphine oxide; diphenyl phosphine oxide, or triphenylphosphine oxide; a C5 to C20 alkyl phosphonic; a C5 to C20 alkylphosphinic acid such as hexylphosphinic acid, octylphosphinic acid,dodecanephosphinic acid, tetradecanephosphinic acid,hexadecanephosphinic acid, or octadecanephosphinic acid; and the like,but are not limited thereto. The quantum dot may include one or moreorganic ligand(s).

The quantum dot may have quantum efficiency of greater than or equal toabout 10%, for example, greater than or equal to about 30%, greater thanor equal to about 50%, greater than or equal to about 60%, greater thanor equal to about 70%, greater than or equal to about 90% or even about100%. The quantum dot may have a narrower photoluminescence spectrum.For example, the quantum dot may have a full width at half maximum(FWHM) of less than or equal to about 45 nm, for example less than orequal to about 40 nm, less than or equal to about 30 nm in aphotoluminescence wavelength spectrum.

The quantum dot may emit light in wavelength ranges of ultraviolet (UV)to visible ray or even near infrared ray or more by changing sizes andcompositions. For example, the quantum dot may emit light in awavelength of about 300 nm to about 700 nm, for example, about 400 nm toabout 700 nm or light in a wavelength of about 700 nm or greater, but isnot limited thereto. For example, the quantum dot may absorb the thirdlight (e.g., blue light) (e.g., excited by the third light) and may emitthe first light or the second light.

The quantum dot polymer composite may further include a metal oxideparticulate as desired. The metal oxide particulate may include titaniumoxide, silicon oxide, barium oxide, zinc oxide, or a combinationthereof. The metal oxide particulate may include TiO₂, SiO₂, BaTiO₃,Ba₂TiO₄, ZnO, ZrO₂, or a combination thereof. The metal oxideparticulate may have an average particle size of greater than or equalto about 100 nm and less than or equal to about 500 nm, but is notlimited thereto. The metal oxide particulate may perform a function oflight diffusion/scattering.

In the quantum dot polymer composite, an amount of the quantum dot isnot particularly limited, but may be appropriately controlled. Theamount of the quantum dot may be greater than or equal to about 1 wt %,for example, greater than or equal to about 2 wt %, greater than orequal to about 3 wt %, greater than or equal to about 4 wt %, greaterthan or equal to about 5 wt %, greater than or equal to about 6 wt %,greater than or equal to about 7 wt %, greater than or equal to about 8wt %, greater than or equal to about 9 wt %, greater than or equal toabout 10 wt %, greater than or equal to about 11 wt %, greater than orequal to about 12 wt %, greater than or equal to about 13 wt %, greaterthan or equal to about 14 wt %, greater than or equal to about 15 wt %,greater than or equal to about 16 wt %, greater than or equal to about17 wt %, greater than or equal to about 18 wt %, greater than or equalto about 19 wt %, greater than or equal to about 20 wt %, greater thanor equal to about 21 wt %, greater than or equal to about 22 wt %,greater than or equal to about 23 wt %, greater than or equal to about24 wt %, greater than or equal to about 25 wt %, greater than or equalto about 26 wt %, greater than or equal to about 27 wt %, greater thanor equal to about 28 wt %, greater than or equal to about 29 wt %, orgreater than or equal to about 30 wt %, based on a total weight of thecomposite. The amount of the quantum dot may be less than or equal toabout 70 wt %, for example, less than or equal to about 65 wt %, lessthan or equal to about 60 wt %, less than or equal to about 55 wt %,less than or equal to about 50 wt %, less than or equal to about 45 wt%, less than or equal to about 40 wt %, less than or equal to about 35wt %, less than or equal to about 30 wt %, less than or equal to about25 wt %, less than or equal to about 20 wt %, less than or equal toabout 19 wt %, less than or equal to about 17 wt %, or less than orequal to about 15 wt %, based on a total weight of the composite.

In the quantum dot polymer composite, if present, an amount of the metaloxide particulate may be greater than or equal to about 0.1 wt %,greater than or equal to about 0.5 wt %, greater than or equal to about1 wt %, greater than or equal to about 2 wt %, greater than or equal toabout 3 wt %, greater than or equal to about 4 wt %, greater than orequal to about 5 wt %, greater than or equal to about 6 wt %, greaterthan or equal to about 7 wt %, greater than or equal to about 8 wt %, orgreater than or equal to about 9 wt %, based on a total weight of thecomposite. The amount of the metal oxide particulate may be less than orequal to about 50 wt %, less than or equal to about 40 wt %, less thanor equal to about 30 wt %, less than or equal to about 25 wt %, lessthan or equal to about 20 wt %, less than or equal to about 19 wt %,less than or equal to about 18 wt %, less than or equal to about 17 wt%, less than or equal to about 16 wt %, or less than or equal to about15 wt %, based on a total weight of the composite.

In the layered structure, a thickness of the photoluminescent layer maybe appropriately selected. For example, the thickness of thephotoluminescent layer may be greater than or equal to about 2micrometers (μm), greater than or equal to about 3 μm, greater than orequal to about 4 μm and for example less than or equal to about 12 μm,less than or equal to about 10 μm, less than or equal to about 9 μm,less than or equal to about 8 μm, less than or equal to about 7 μm, orless than or equal to about 6 μm.

In the light absorption layer disposed on the photoluminescent layer andincluding an absorptive color-filter material, the absorptivecolor-filter material is dispersed in a second polymer matrix. Theabsorptive color-filter material is configured to absorb the excitationlight that passes through the photoluminescent layer and to transmit thelight emitted from the plurality of quantum dots. Unlike a blue cutfilter including a multi-layered inorganic film, the light absorptionlayer arranged in the structure of the embodiment may accomplishimproved color purity without causing relatively substantialdeterioration in a contrast of a display device.

In an embodiment, the light absorption layer is configured to absorbexcitation light and to transmit light emitted from quantum dots (e.g.,first light and/or second light). When the photoluminescent layer has arepeating section (e.g., including the first and the second sections),the light absorption layer may be patterned to have a first absorptionsection and a second absorption section corresponding to the firstsection and the second section, respectively, and the first absorptionsection may be configured to absorb excitation light and to transmit atleast the first light and the second absorption section may beconfigured to absorb excitation light and to transmit at least thesecond light. In an embodiment, when the excitation light is blue light(having a center wavelength of about 430 nm to about 470 nm), theabsorptive color-filter material may be a yellow color-filter materialthat absorbs the blue light and transmits light of about 470 nm to about650 nm (e.g., green light having a center wavelength of about 510 nm toabout 550 nm and red light having a center wavelength of about 570 nm toabout 640). The absorptive color-filter material may be a green colorfilter material that absorbs blue light and red light and transmitsgreen light. The absorptive color-filter material may be a red colorfilter material that absorbs blue light and green light and transmitsred light.

The absorptive color-filter material may include an organic pigment, anorganic dye, an inorganic pigment, an inorganic dye, or a combinationthereof.

The organic/inorganic pigment/dye (hereinafter, also referred to as acolorant) for the absorptive color-filter material is not particularlylimited and may be appropriately selected considering wavelength rangesof a blocked light and transmitted light. Examples of the organicpigment may be Pigment Red 122, Pigment Red 202, Pigment Red 206,Pigment Red 209, Pigment Red 177, Pigment Red 254 classified by colorindices published by “The (C.I.) Society of Dyers and Colourists Co.”;Pigment Yellow 13, Pigment Yellow 55, Pigment Yellow 119, Pigment Yellow138, Pigment Yellow 139, Pigment Yellow 168; materials having colorindices of Pigment Green 7 or Pigment Green 36 or a derivative thereof.Examples of the inorganic pigment may include titanium oxide, bariumsulfate, calcium carbonate, zinc oxide, lead lactate, yellow lead, zincsulfide, iron oxide red, cadmium red, ultramarine blue, Prussian blue,chromium oxide green, cobalt green, amber, and the like, but are notlimited thereto. For example, examples of red (R) colorant may include aperylene-based pigment, a lake pigment, an azo-based pigment, aquinacridone-based pigment, an anthraquinone-based pigment, ananthracene-based pigment, an isoindoline-based pigment, anisoindolinone-based pigment, or a combination thereof, but are notlimited thereto. Examples of the green (G) colorant may be a halogenmulti-substituted phthalocyanine-based pigment, a halogenmulti-substituted copper phthalocyanine-based pigment, atriphenylmethane-based basic dye, an isoindoline-based pigment, anisoindolinone-based pigment, or a combination thereof, but are notlimited thereto.

The second polymer matrix may include a (meth)acrylate polymer, athiol-ene polymer, a urethane polymer, an epoxy polymer, a vinylpolymer, a silicone polymer, an imide polymer, an amide polymer, or acombination thereof (e.g., copolymers or mixtures of the polymers,etc.). The second polymer matrix may include a cross-linked polymer. Thecross-linked polymer is the same as in the first polymer matrix.

In the light absorption layer, an amount of the absorptive color-filtermaterial may be controlled appropriately. For example, the amount of theabsorptive color-filter material may be greater than or equal to about10 wt %, greater than or equal to about 15 wt %, greater than or equalto about 20 wt %, greater than or equal to about 25 wt %, greater thanor equal to about 30 wt %, greater than or equal to about 35 wt %, orgreater than or equal to about 40 wt %, based on a total weight of thelight absorption layer. The amount of the absorptive color-filtermaterial may be less than or equal to about 90 wt %, less than or equalto about 85 wt %, less than or equal to about 80 wt %, less than orequal to about 75 wt %, less than or equal to about 70 wt %, less thanor equal to about 65 wt %, less than or equal to about 60 wt %, or lessthan or equal to about 55 wt %, based on a total weight of the lightabsorption layer.

In the light absorption layer, an amount of the second polymer matrixmay be appropriately controlled. For example, the amount of the secondpolymer matrix may be greater than or equal to about 10 wt %, greaterthan or equal to about 15 wt %, greater than or equal to about 20 wt %,greater than or equal to about 25 wt %, greater than or equal to about30 wt %, greater than or equal to about 35 wt %, or greater than orequal to about 40 wt %, based on a total weight of the light absorptionlayer. The amount of the second polymer matrix may be less than or equalto about 90 wt %, less than or equal to about 85 wt %, less than orequal to about 80 wt %, less than or equal to about 75 wt %, less thanor equal to about 70 wt %, less than or equal to about 65 wt %, lessthan or equal to about 60 wt %, or less than or equal to about or 55 wt%, based on a total weight of the light absorption layer.

A thickness of the light absorption layer may be appropriately selectedconsidering an absorbance of excitation light (e.g., blue light). Forexample, the thickness of the light absorption layer may be greater thanor equal to about 0.1 μm, greater than or equal to about 0.2 μm, greaterthan or equal to about 0.3 μm, greater than or equal to about 0.4 μm, orgreater than or equal to about 0.5 μm. The thickness of the lightabsorption layer may be less than or equal to about 3 μm, less than orequal to about 2.5 μm, less than or equal to about 2 μm, or less than orequal to about 1.5 μm.

The aforementioned light absorption layer may allow a layered structureaccording to an embodiment to accomplish improved color purity as wellas maintain a satisfactory contrast, but the light absorption layer mayalso bring about a relatively substantial loss of excitation light andmay be a cause of deterioration of a photoluminescent layer.

When the photoluminescent layer is disposed directly on a lighttransmitting substrate (e.g., glass) without the light absorption layer,at least a portion of non-converted excitation light emitted toward thelight transmitting substrate may suffer an internal total reflection(ITR) on the interface between the photoluminescent layer and the lighttransmitting substrate and between the light transmitting substrate andthe air. This internal total reflection may optically recirculateexcitation light and increase conversion efficiency. However, when thelight absorption layer is disposed on the photoluminescent layer, theinternal total reflection of non-converted excitation light does notalmost occur despite disposition of the light transmitting substrate onthe light absorption layer, and thus a light conversion rate may sharplydecrease.

In addition, the present inventors have discovered that the lightabsorption layer may be a cause of substantial chemical/thermaldegradation of the photoluminescent layer. A patterning process of thephotoluminescent layer on the light absorption layer may accompany aheat treatment at a relatively high temperature. The materials (e.g., acomponent of a quantum dot polymer composite and a component oforganic/inorganic dyes) may move/diffuse in the interface between thelight absorption layer and the photoluminescent layer during the heattreatment, and thereby, chemical/thermal degradation of a quantum dotpolymer composite may be noticeable. The degradation (lower stability)of a quantum dot polymer composite may lead to a sharp decrease inluminous efficiency of the photoluminescent layer. Accordingly, alayered structure having the photoluminescent layer and the lightabsorption layer may show greatly decreased luminous efficiency. Forexample, the luminous efficiency of the layered structure having thephotoluminescent layer and the light absorption layer may be less thanor equal to about 77% of that of a structure having no light absorptionlayer.

The layered structure according to an embodiment includes a siliconcontaining layer between the photoluminescent layer and the lightabsorption layer. The layered structure according to an embodiment mayrealize improved luminous efficiency along with improved colorreproducibility. Without being bound by any theory, interposition of thesilicon containing layer may cause the internal reflection or internaltotal reflection of non-converted excitation light on the interfacebetween the photoluminescent layer and the silicon containing layer.This internal reflection or total reflection may contribute to anoptical recirculation. In addition, a silicon containing layer disposedbetween the photoluminescent layer and the light absorption layer mayblock a material movement between the photoluminescent layer and thelight absorption layer during the heat treatment and contribute tosuppressing/reducing/preventing the degradation of the photoluminescentlayer.

The silicon containing layer may not include the quantum dot and theabsorptive color-filter material. The silicon containing layer mayinclude silicon oxide. The silicon containing layer may consist ofsilicon oxide. The silicon oxide may include SiO_(x) (wherein x is 1 to2), an organosilicon compound including a moiety represented by*—Si—O—Si—* (wherein * is a linking portion with an adjacent atom), or acombination thereof. The silicon containing layer may include adeposition silica layer, a porous silica layer, an organosiliconcompound layer, a plurality of silica particles, or a combinationthereof. The silicon containing layer may include a cross-linked polymerand a plurality of silica particles dispersed in the cross-linkedpolymer. The silicon containing layer may include a first layerincluding a cross-linked polymer and a SiO_(x) (wherein x is a number of1 to 2) containing layer disposed on, e.g., directly contacts, a surfaceof the first layer. The SiO_(x) containing layer may include adeposition silica layer, a porous silica layer, or a combinationthereof.

The organosilicon compound may have an *—Si—O—Si—* bond and tetrahedralSi vertices. The organosilicon compound may include a silsesquioxane(SSQ) structural unit that is represented by (RSiO_(3/2))_(n) (wherein,n is 1 to 20 and R is hydrogen, a C1 to C30 substituted or unsubstitutedaliphatic moiety, a C3 to C30 substituted or unsubstituted alicyclicmoiety, a C6 to C30 substituted or unsubstituted aromatic moiety, or acombination thereof) and may have a cage structure, a ladder structure,a polymeric structure, or a combination thereof.

The Si containing layer (e.g., SSQ containing layer) may chemicallyblock the photoluminescent layer and the light absorption layertherebetween while having a lower refractive index than the lightabsorption layer. For example, silsesquioxane may have a porousstructure having a silicon oxide-based micropore and may realize a lowrefractive index than that of a cross-linked polymer. Accordingly, theinternal total reflection suppressed by the light absorption layer mayoccur between the photoluminescent layer and the Si-containing layer andthus increase a recirculation ratio of excited light, which may beconfirmed by improved luminous efficiency of the layered structurebefore a heat treatment at a high temperature. In addition, the aboveSi-containing layer may suppress degradation of the layered structure onthe interface between the light absorption layer and thephotoluminescent layer during the heat treatment at a high temperature,which may be confirmed by a process maintenance rate after the heattreatment at a high temperature. Accordingly, the layered structureaccording to an embodiment may show increased luminous efficiency aswell as improved color reproducibility and a high contrast ratio.

In an embodiment, the organosilicon compound may include at least twosilsesquioxane structural units linked by a linking group including abond between sulfur and carbon.

The linking group may be formed by a reaction between a silsesquioxanecompound including at least two thiol groups at the terminal end(hereinafter, thiol-substituted silsesquioxane compound) and an-enecompound having a carbon-carbon unsaturated bond (e.g., double bond ortriple bond) (e.g., at least one, or at least two carbon-carbonunsaturated bond at a terminal end thereof).

In an embodiment, the thiol-substituted silsesquioxane compound may be(RSiO_(3/2))_(n) (wherein, R is hydrogen, —SH, a C1 to C40 substitutedor unsubstituted aliphatic hydrocarbon group, a C6 to C40 substituted orunsubstituted aromatic hydrocarbon group, a C3 to C40 substituted orunsubstituted alicyclic hydrocarbon group, or a combination thereof,provided that at least two of R's are —SH and n is 6, 8, 10, or 12).

In an embodiment, the thiol-substituted silsesquioxane compound may havethe following chemical structure:

wherein, R is hydrogen, —SH, a C1 to C40 substituted or unsubstitutedaliphatic hydrocarbon group, a C6 to C40 substituted or unsubstitutedaromatic hydrocarbon group, a C3 to C40 substituted or unsubstitutedalicyclic hydrocarbon group, or a combination thereof, provided that atleast two (e.g., 3, 4, 5, 6, 7, or 8) of R's are —SH.

The -ene compound having the carbon-carbon unsaturated bond may berepresented by Chemical Formula 2:

wherein, X is a C2-30 aliphatic hydrocarbon group having a carbon-carbonunsaturated bond (e.g., double bond or triple bond), a C6-30 aromatichydrocarbon group having a carbon-carbon unsaturated bond, or a C3-30alicyclic hydrocarbon group having a carbon-carbon unsaturated bond,

R² is hydrogen; a substituted or unsubstituted C1 to C30 linear orbranched alkyl group; a substituted or unsubstituted C6 to C30 arylgroup; a substituted or unsubstituted C3 to C30 heteroaryl group; asubstituted or unsubstituted C3 to C30 cycloalkyl group; a substitutedor unsubstituted C3 to C30 heterocycloalkyl group; a C1 to C10 alkoxygroup; a hydroxy group; NH₂; a substituted or unsubstituted C1 to C30amine group (—NRR′, wherein R and R′ are independently hydrogen or a C1to C30 linear or branched alkyl group); an isocyanate group; a halogen;—ROR′ (wherein R is a substituted or unsubstituted C1 to C20 alkylenegroup R′ is hydrogen or a C1 to C20 linear or branched alkyl group); anacyl halide (—RC(═O)X, wherein R is a substituted or unsubstituted C1 toC20 alkylene group and X is a halogen); —C(═O)OR′ (wherein R′ ishydrogen or a C1 to C20 linear or branched alkyl group); —ON;—C(═O)ONRR′ (wherein R and R′ are independently hydrogen or a C1 to C20linear or branched alkyl group); or a combination thereof,

L₂ is a carbon atom, a substituted or unsubstituted C1 to C30 alkylenegroup, a substituted or unsubstituted C2 to C30 alkylene group whereinat least one methylene (—CH₂—) is replaced by sulfonyl (—SO₂—), carbonyl(CO), ether (—O—), sulfide (—S—), sulfoxide (—SO—), ester (—C(═O)O—),amide (—C(═O)NR—) (wherein R is hydrogen or a C1 to C10 alkyl group) ora combination thereof, a substituted or unsubstituted C6 to C30cycloalkylene group, a substituted or unsubstituted C6 to C30 arylenegroup, or a substituted or unsubstituted C3 to C30 heteroarylene group,a substituted or unsubstituted C6 to C30 heterocycloalkylene group, or acombination thereof,

Y₂ is a single bond; a substituted or unsubstituted C1 to C30 alkylenegroup; a substituted or unsubstituted C2 to C30 alkenylene group; or asubstituted or unsubstituted C2 to C30 alkylene group or a substitutedor unsubstituted C3 to C30 alkenylene group wherein at least onemethylene (—CH₂—) is replaced by sulfonyl (—S(═O)₂—), carbonyl(—C(═O)—), ether (—O—), sulfide (—S—), sulfoxide (—S(═O)—), ester(—C(═O)O—), amide (—C(═O)NR—) (wherein R is hydrogen or a C1 to C10linear or branched alkyl group), imine (—NR—) (wherein R is hydrogen ora C1 to C10 linear or branched alkyl group) or a combination thereof, nis an integer of 1 or more,

k3 is 0 or an integer of greater than or equal to one (1), k4 is aninteger of 1 or more, and

the sum of n and k4 is an integer of 3 or more,

n may not exceed the valence of Y₂ when Y₂ is not a single bond

provided that the sum of k3 and k4 does not exceed the valence of L₂.

The -ene compound having the carbon-carbon unsaturated may be a compoundrepresented by Chemical Formula 2-1, Chemical Formula 2-2, or ChemicalFormula 2-3:

wherein, in Chemical Formulae 2-1 and 2-2, Z₁ to Z₃ are the same ordifferent and are independently *—Y₂—(X)_(n) of Chemical Formula 2;

wherein,

L₂′ is carbon; a substituted or unsubstituted C1 to C30 alkylene group;a substituted or unsubstituted C2 to C30 alkenylene group; a substitutedor unsubstituted C2 to C30 alkylene group wherein at least one methylene(—CH₂—) is replaced by sulfonyl (—S(═O)₂—), carbonyl (—C(═O)—), ether(—O—), sulfide (—S—), sulfoxide (—S(═O)—), ester (—C(═O)O—), amide(—C(═O)NR—) (wherein R is hydrogen or a C1 to C10 linear or branchedalkyl group), imine (—NR—) (wherein R is hydrogen or a C1 to C10 linearor branched alkyl group), a C6 to C10 cycloalkylene group, or acombination thereof; a substituted or unsubstituted C3 to C30 alkenylenegroup wherein at least one methylene (—CH₂—) is replaced by sulfonyl(—S(═O)₂—), carbonyl (—C(═O)—), ether (—O—), sulfide (—S—), sulfoxide(—S(═O)—), ester (—C(═O)O—), amide (—C(═O)NR—) (wherein R is hydrogen ora C1 to C10 linear or branched alkyl group), imine (—NR—) (wherein R ishydrogen or a C1 to C10 linear or branched alkyl group), a C6 to C10cycloalkylene group, or a combination thereof; a substituted orunsubstituted C6 to C30 arylene group; a substituted or unsubstituted C3to C30 heteroarylene group; a substituted or unsubstituted C3 to C30cycloalkylene group; or a substituted or unsubstituted C3 to C30heterocycloalkylene group,

Y_(a) to Y_(d) are independently a single bond; a substituted orunsubstituted C1 to C30 alkylene group; a substituted or unsubstitutedC2 to C30 alkenylene group; or a substituted or unsubstituted C2 to C30alkylene group or a substituted or unsubstituted C3 to C30 alkenylenegroup wherein at least one methylene (—CH₂—) is replaced by sulfonyl(—S(═O)₂—), carbonyl (—C(═O)—), ether (—O—), sulfide (—S—), sulfoxide(—S(═O)—), ester (—C(═O)O—), amide (—C(═O)NR—) (wherein R is hydrogen ora C1 to C10 linear or branched alkyl group), imine (—NR—) (wherein R ishydrogen or a C1 to C10 linear or branched alkyl group), or acombination thereof, and

R′_(a) to R′_(d) are R² or X of Chemical Formula 2, provided that atleast two of R′_(a) to R′_(d) are X of Chemical Formula 2.

The -ene compound having the carbon-carbon unsaturated may include acompound of Chemical Formula 2-4, a compound of Chemical Formula 2-5, acompound of Chemical Formula 2-6, a compound of Chemical Formula 2-7, acompound of Chemical Formula 2-8, a compound of Chemical Formula 2-9, acompound of Chemical Formula 2-10, a compound of Chemical Formula 2-11,a compound of Chemical Formula 2-12, a compound of Chemical Formula2-13, a compound of Chemical Formula 2-14, a compound of ChemicalFormula 2-15, a compound of Chemical Formula 2-16, or a mixture thereof:

wherein, in Chemical Formula 2-7, R₁ is a single bond, a C1 to C20alkylene group, or a C2 to C20 alkylene group wherein at least onemethylene (—CH₂—) is replaced by sulfonyl (—S(═O)₂—), carbonyl(—C(═O)—), ether (—O—), sulfide (—S—), sulfoxide (—S(═O)—), ester(—C(═O)O—), amide (—C(═O)NR—) (wherein R is hydrogen or a C1 to C10linear or branched alkyl group), imine (—NR—) (wherein R is hydrogen ora C1 to C10 linear or branched alkyl group), or a combination thereof,and R₂ is hydrogen or a methyl group;

wherein, in Chemical Formula 2-8, R is hydrogen or a C1 to C10 alkylgroup;

wherein, in Chemical Formula 2-9, A is hydrogen, a C1 to C10 alkylgroup, or a hydroxy group, R₁ is a single bond, a C1 to C20 alkylenegroup, a C2 to C20 alkylene wherein at least one methylene (—CH₂—) isreplaced by sulfonyl (—S(═O)₂—), carbonyl (—C(═O)—), ether (—O—),sulfide (—S—), sulfoxide (—S(═O)—), ester (—C(═O)O—), amide (—C(═O)NR—)(wherein R is hydrogen or a C1 to C10 linear or branched alkyl group),imine (—NR—) (wherein R is hydrogen or a C1 to C10 linear or branchedalkyl group), or a combination thereof, and R₂ is hydrogen or a methylgroup;

wherein, in Chemical Formula 2-10, R₁ is a single bond, a C1 to C20alkylene, or a C2 to C20 alkylene wherein at least one methylene (—CH₂—)is replaced by sulfonyl (—S(═O)₂—), carbonyl (—C(═O)—), ether (—O—),sulfide (—S—), sulfoxide (—S(═O)—), ester (—C(═O)O—), amide (—C(═O)NR—)(wherein R is hydrogen or a C1 to C10 linear or branched alkyl group),imine (—NR—) (wherein R is hydrogen or a C1 to C10 linear or branchedalkyl group), or a combination thereof, and R₂ is hydrogen or a methylgroup;

wherein, in Chemical Formula 2-11, R is a single bond, a C1 to C20alkylene, or a C2 to C20 alkylene wherein at least one methylene (—CH₂—)is replaced by sulfonyl (—S(═O)₂—), carbonyl (—C(═O)—), ether (—O—),sulfide (—S—), sulfoxide (—S(═O)—), ester (—C(═O)O—), amide (—C(═O)NR—)(wherein R is hydrogen or a C1 to C10 linear or branched alkyl group),imine (—NR—) (wherein R is hydrogen or a C1 to C10 linear or branchedalkyl group), or a combination thereof,

wherein, in Chemical Formula 2-12, R is a single bond, a C1 to C20alkylene, or a C2 to C20 alkylene wherein at least one methylene (—CH₂—)is replaced by sulfonyl (—S(═O)₂—), carbonyl (—C(═O)—), ether (—O—),sulfide (—S—), sulfoxide (—S(═O)—), ester (—C(═O)O—), amide (—C(═O)NR—)(wherein R is hydrogen or a C1 to C10 linear or branched alkyl group),imine (—NR—) (wherein R is hydrogen or a C1 to C10 linear or branchedalkyl group), or a combination thereof,

wherein, each L is the same or different and each is independently asingle bond, a C1 to C20 alkylene, or a C2 to C20 alkylene wherein atleast one methylene (—CH₂—) is replaced by sulfonyl (—S(═O)₂—), carbonyl(—C(═O)—), ether (—O—), sulfide (—S—), sulfoxide (—S(═O)—), ester(—C(═O)O—), amide (—C(═O)NR—) (wherein R is hydrogen or a C1 to C10linear or branched alkyl group), imine (—NR—) (wherein R is hydrogen ora C1 to C10 linear or branched alkyl group), or a combination thereof,and

R is the same or different and are independently hydrogen or a methylgroup.

The linking group may be formed by a reaction between an Si containingcompound (e.g., silsesquioxane compound) substituted with R including atleast two carbon-carbon double bonds at the terminal end and amulti-thiol compound having at least two thiol groups.

The multi-thiol compound may include a compound represented by ChemicalFormula 1. Details of the multi-thiol compound are the same as describedabove. In the formation of the linking group, a ratio between the thiolgroup and the -ene group may be appropriately controlled. For example, amole ratio of the thiol group and the -ene group may be about 1:2 (=thenumber of thiol groups: the number of -ene groups) to about 2:1. Forexample, an amount of the -ene group per 1 mole of the thiol Group maybe greater than or equal to about 0.5 moles or greater than or equal toabout 0.6 moles. For example, an amount of the -ene group per 1 mole ofthe thiol Group may be less than or equal to about 2 moles, less than orequal to about 1.8 moles, less than or equal to about 1.5 moles, or lessthan or equal to about 1.3 mol.

In an embodiment, the silicon containing layer may consist of thesilicon oxide, e.g., the silicon containing layer may include a singlelayer of the SiO_(x) material(s) (see FIG. 4A). For example, the siliconcontaining layer may include a single deposition silica layer, a singlelayer of an organosilicon compound, a single porous silica layer, or asingle layer including a combination of at least two thereof.

In another embodiment, the silicon containing layer may include multiplelayers, for example may include two or more of a deposition silicalayer, a layer of an organosilicone compound, a porous silica layer, ora combination thereof.

In another embodiment, the silicon containing layer may include across-linked polymer. When the silicon containing layer includes thecross-linked polymer, a layer including the cross-linked polymer may bedisposed on a surface of the layer including the silicon oxide (e.g.,consisting of the silicon oxide) (see FIG. 4C). In other words, thesilicon containing layer may be a layered structure including acrosslinked polymer layer and an SiO_(x) (wherein x is 1 to 2) layerdeposited thereon.

A (layered) silicon containing layer having a multi-layer structure maybe disposed on the light absorption layer so that a cross-linked polymerlayer may contact the first surface of the light absorption layer and asilicon oxide layer (e.g., porous silica layer) may contact thephotoluminescence layer. For example, the cross-linked polymer layer maybe disposed on (e.g., may contact) the first surface of the lightabsorption layer, the silicon oxide layer (porous silica layer) may bedisposed on (e.g., may contact) the cross-linked polymer layer, and thephotoluminescent layer may be disposed on (e.g., may contact) thesilicon oxide layer (porous silica layer).

Alternatively, a layered silicon containing layer may be disposed on thelight absorption layer so that the silicon oxide layer may contact thefirst surface of the light absorption layer and the cross-linked polymerlayer may contact the photoluminescent layer. For example, the siliconoxide layer (e.g., porous silica layer) may be disposed on (e.g., maycontact) the light absorption layer, the cross-linked polymer layer maybe disposed on (e.g., may contact) the silicon oxide layer (e.g., poroussilica layer), and the photoluminescence polymer layer may be disposedon (e.g., may contact) the cross-linked polymer layer.

The cross-linked polymer layer and the silicon oxide layer may contacteach other.

When the silicon containing layer includes the cross-linked polymer, aplurality of silicon oxide particles may be dispersed in the matrix ofthe cross-linked polymer to form a composite (see FIG. 4B)), and typesof the cross-linked polymer are the same as described above. The siliconoxide particles may include or consist of SiO_(x) (wherein x is 1 to 2).

A thickness of the silicon containing layer is not particularly limitedand may be selected considering light transmittance and stability ofsubsequent processes. In an embodiment, the thickness of the siliconcontaining layer may be greater than or equal to about 100 nm, forexample, greater than or equal to about 200 nm, greater than or equal toabout 300 nm, greater than or equal to about 400 nm, or greater than orequal to about 500 nm and less than or equal to about 3 μm or less thanor equal to about 2 μm, or less than or equal to about 1 μm. The siliconcontaining layer may have a lower refractive index than those of thephotoluminescent layer and the light absorption layer. For example, thesilicon containing layer may have a refractive index of greater than orequal to about 1.2, for example, greater than or equal to about 1.3. Thesilicon containing layer may have a refractive index of less than orequal to about 1.5, for example, less than or equal to about 1.45.

An Si content of the silicon containing layer may be greater than orequal to about 5 wt %, for example, greater than or equal to about 10 wt%, greater than or equal to about 20 wt %, greater than or equal toabout 30 wt %, greater than or equal to about 40 wt %, based on anentire weight of the silicon containing layer. The Si content of thesilicon containing layer may be less than or equal to about 90 wt %, forexample, less than or equal to about 80 wt %, less than or equal toabout 70 wt %, less than or equal to about 60 wt %, less than or equalto about 50 wt %, less than or equal to about 45 wt %, based on a totalweight of the silicon containing layer. The Si content of the siliconcontaining layer may be confirmed by ICP, EDS, and XRF analyses and thelike.

The layered structure according to an embodiment may be fabricated in anappropriate method. In an embodiment, a method of manufacturing thelayered structure in an embodiment (e.g., on a light transmittingsubstrate) may include forming a light absorption layer; forming asilicon containing layer on the light absorption layer; and forming aquantum dot polymer composite layer on the silicon containing layer. Theobtained layered structure may be patterned as desired.

Details of the light transmitting substrate are the same as describedabove.

The forming the light absorption layer may include obtaining acomposition for a light absorption layer including a precursor (e.g., amonomer) combination for a second polymer matrix and an absorptivecolor-filter material, coating the composition on the light transmittingsubstrate in an appropriate method to obtain a film, and curing the film(e.g., by light and/or heat). The thermal curing may be performed at atemperature of greater than or equal to about 100° C. but is not limitedthereto. The precursor combination for a second polymer matrix may beappropriately selected depending on a kind of polymer. For example, theprecursor combination may include a (meth)acryl-based monomer, amultiple thiol compound, a vinyl-based monomer, an epoxy compound, aurethane compound, a silicon compound, a precursor for polyimide orpolyimideamide (e.g., a mixture of aromatic or aliphatic tetracarboxylicacid dianhydride with aromatic or aliphatic diamine, a polyamic acidcompound, or all of them), or a combination thereof. Thesemonomers/compounds may be commercially available or may be synthesized.

A method of forming the silicon containing layer on the light absorptionlayer may vary with the composition of the silicon containing layer. Forexample, when the silicon containing layer is a deposition SiO_(x)(wherein x is 1 to 2), the silicon containing layer may be formed by adeposition method such as physical vapor deposition or chemical vapordeposition. Physical vapor deposition may be performed by a thermalvacuum method, a sputtering method, and/or an electron beam method. Thephysical vapor deposition may be performed by a commercially availableapparatus and a known method considering kinds of depositionmaterials/thickness. An atmosphere, a temperature, a target material,and a vacuum degree of the deposition may be appropriately selected andis not particularly limited. A manner of the chemical vapor depositionis not particularly limited and may be appropriately selected. Thechemical vapor deposition may be performed by manners of normal pressureCVD, low pressure CVD, ultra high vacuum CVD, plasma CVD, and the like,but is not limited thereto. The chemical deposition may be performed bya commercially available apparatus and a known method considering thetypes of deposition materials/thickness. An atmosphere, a temperature,types of gases, and a vacuum degree of the deposition may beappropriately selected and is not particularly limited.

When the silicon containing layer includes an organosilicone compound,the silicon containing layer may be formed for example by preparing acomposition including an appropriate precursor (e.g., a silsesquioxaneprecursor), coating the composition on the light absorption layer toobtain a film, and curing it. When the organosilicon compound includesat least two silsesquioxane structural units linked by a linking groupincluding a bond between sulfur and carbon, a composition including theabove thiol substituted (or carbon-carbon unsaturated bond-including)silsesquioxane compound and an -ene compound (or a multiple thiolcompound) may be prepared and used.

The forming of a photoluminescent layer including a quantum dot polymercomposite on or over the silicon containing layer may include preparinga quantum dot photo resist composition (hereinafter, referred to be a QDPR composition) including a plurality of quantum dot, aphotopolymerizable compound including at least two polymerizablemoieties, a carboxylic acid linear polymer (e.g., a binder), aphotoinitiator, and an organic solvent, coating the QD PR composition onthe silicon-containing layer to obtain a QD PR film, exposing the QD PRfilm to light to perform a cross-linking polymerization in an exposedregion, and forming a layer of a quantum dot polymer composite dispersedin a polymer matrix.

A quantum dot-polymer composite pattern may be obtained by exposing apredetermined region of the obtained film (e.g., under a mask) andremoving unexposed region from the film using an alkali aqueoussolution. The obtained pattern may be heated at a predeterminedtemperature (e.g., a temperature of greater than or equal to about 160°C.). The composition may be coated on a light transmitting substrate byan appropriate method (e.g., spin coating) to form a film. The formedfilm may be subjected to pre-baking as desired. The pre-baking may beperformed at a temperature of less than or equal to about 130° C., forexample, about 90° C. to about 120° C. A time of the pre-baking is notparticularly limited and may be appropriately selected. For example, thepre-baking may be performed for greater than or equal to about 1 minuteand less than or equal to about 60 minutes, but is not limited thereto.The pre-baking may be performed under a predetermined atmosphere (e.g.,air, oxygen-free atmosphere, inert gas atmosphere), is not particularlylimited thereto.

In the exposed region, a cross-linking polymerization occurs and formsthe quantum dot polymer composite dispersed in the polymer matrix. Thequantum dot polymer composite film is treated with an alkali aqueoussolution to remove an unexposed region from the film and obtain apattern of the quantum dot polymer composite. The QD PR composition maybe developed with an alkali aqueous solution and thus form the quantumdot-polymer composite pattern without using an organic solventdeveloping solution. The quantum dot, the photopolymerizable compound,the carboxylic acid group-containing polymer (binder), the transmissivesubstrate, the polymer matrix, and the quantum dot-polymer composite arethe same as described above.

A non-limiting method of forming a pattern is explained referring toFIG. 5. The composition is coated on a structure including a substrate/alight absorption layer/an Si containing layer with a predeterminedthickness (e.g., a thickness of about 3 μm to about 30 μm) using anappropriate method such as spin coating or slit coating to form a film.The formed film may be pre-baked, if desired. The formed (or optionallypre-baked) film is exposed to light having a predetermined wavelengthunder a mask having a predetermined pattern. A wavelength and intensityof the light may be selected considering kinds and contents of thephotoinitiator, kinds and contents of the quantum dots, and the like.The exposed film is treated (e.g., dipped or sprayed) with an alkalideveloping solution and thus an unexposed part of the film is dissolvedto form the quantum dot polymer composite pattern. The obtained patternmay be post-baked (S5), if desired, to improve crack resistance andsolvent resistance of the pattern, for example, at a temperature ofabout 150° C. to about 230° C. for a predetermined time, for example,greater than or equal to about 10 min or greater than or equal to about20 min.

As desired, the pattern forming process may be repeated at least twiceso that the quantum dot polymer composite pattern of thephotoluminescent layer may have a plurality of sections (e.g., a firstsection, a second section, and optionally a third section).

The light absorption layer composition, the organosiliconcompound-containing composition, and the quantum dot composition(hereinafter, referred to as a composition) may include aphotoinitiator. Types of the photoinitiator are not particularlylimited, and may be selected appropriately. For example, the availablephotoinitiator may include a triazine-based compound, anacetophenone-based compound, a benzophenone-based compound, athioxanthone-based compound, a benzoin-based compound, an oxime-basedcompound, or a combination thereof, but the available photoinitiator isnot limited thereto.

Examples of the triazine-based compound may include2,4,6-trichloro-s-triazine, 2-phenyl-4,6-bis(trichloromethyl)-s-triazine, 2-(3′,4′-dimethoxy styryl)-4,6-bis(trichloromethyl)-s-triazine, 2-(4′-methoxy naphthyl)-4,6-bis(trichloromethyl)-s-triazine, 2-(p-methoxy phenyl)-4,6-bis(trichloromethyl)-s-triazine, 2-(p-tolyl)-4,6-bis(trichloro methyl)-s-triazine,2-biphenyl-4,6-bis(trichloro methyl)-s-triazine, 2,4-bis(trichloromethyl)-6-styryl-s-triazine, 2-(naphthol-yl)-4,6-bis(trichloromethyl)-s-triazine, 2-(4-methoxy naphthol-yl)-4,6-bis(trichloromethyl)-s-triazine, 2,4-trichloro methyl(piperonyl)-s-triazine, or2,4-trichloro methyl (4′-methoxy styryl)-s-triazine but thetriazine-based compound is not limited thereto.

Examples of the acetophenone-based compound may be 2,2′-diethoxyacetophenone, 2,2′-dibutoxy acetophenone, 2-hydroxy-2-methylpropiophenone, p-t-butyl trichloro acetophenone, p-t-butyl dichloroacetophenone, 4-chloro acetophenone, 2,2′-dichloro-4-phenoxyacetophenone, 2-methyl-1-(4-(methylthio)phenyl)-2-morpholinopropan-1-one, 2-benzyl-2-dimethyl amino-1-(4-morpholinophenyl)-butan-1-one, but are not limited thereto.

Examples of the benzophenone-based compound may be benzophenone, benzoylbenzoate, methyl benzoyl benzoate, 4-phenyl benzophenone, hydroxybenzophenone, (meth)acrylated benzophenone, 4,4′-bis(dimethylamino)benzophenone, 4,4′-dichloro benzophenone, 3,3′-dimethyl-2-methoxybenzophenone, but are not limited thereto.

Examples of the thioxanthone-based compound may be thioxanthone,2-methyl thioxanthone, 2-isopropyl thioxanthone, 2,4-diethylthioxanthone, 2,4-diisopropyl thioxanthone, 2-chloro thioxanthone, andthe like, but are not limited thereto.

Examples of the benzoin-based compound may include benzoin, benzoinmethyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoinisobutyl ether, or benzyl dimethyl ketal, but are not limited thereto.

Examples of the oxime-based compound may include2-(o-benzoyloxime)-1-[4-(phenylthio)phenyl]-1,2-octandione and1-(o-acetyloxime)-1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazol-3-yl]ethanone,but are not limited thereto.

The photoinitiator may also be a carbazole-based compound, a diketonecompound, a sulfonium borate-based compound, a diazo-based compound, abiimidazole-based compound, and the like, in addition to the abovephotoinitiator.

The composition may include a solvent. The solvent may be appropriatelyselected considering an affinity for other components in the composition(e.g., a carboxylic acid group-containing polymer, a photopolymerizablecompound, a photoinitiator, other additives, and the like), (as desired,affinity for an alkali developing solution), a boiling point, and thelike. The composition may include the solvent in a balance amount exceptfor the amounts of desired solids (non-volatile powder).

Non-limiting examples of the solvent may include ethylene glycols suchas ethyl 3-ethoxy propionate; ethylene glycol, diethylene glycol, orpolyethylene glycol; glycolethers such as ethyleneglycolmonomethylether, ethylene glycolmonoethylether, diethyleneglycolmonomethylether, ethylene glycoldiethylether, or diethyleneglycoldimethylether; glycolether acetates such as ethylene glycolacetate, ethylene glycolmonoethylether acetate, diethyleneglycolmonoethylether acetate, or diethylene glycolmonobutyletheracetate; propylene glycols such as propylene glycol; propyleneglycolethers such as propylene glycolmonomethylether, propyleneglycolmonoethylether, propylene glycolmonopropylether, propyleneglycolmonobutylether, propylene glycoldimethylether, dipropyleneglycoldimethylether, propylene glycoldiethylether, or dipropyleneglycoldiethylether; propylene glycoletheracetates such as propyleneglycolmonomethyl ether acetate (PGMEA), or dipropyleneglycolmonoethylether acetate; amides such as N-methylpyrrolidone,dimethyl formamide, or dimethyl acetamide; ketones such asmethylethylketone (MEK), methylisobutylketone (MIBK), or cyclohexanone;petroleum products (hydrocarbons) such as toluene, xylene, or solventnaphtha; esters such as ethyl acetate, butyl acetate, or ethyl lactate;ethers such as diethyl ether, dipropyl ether, or dibutyl ether, or amixture thereof.

If desired, the composition (photosensitive composition may furtherinclude various additives such as a light diffusing agent, a levelingagent, or a coupling agent in addition to the aforementioned components.The amount of the additive is not particularly limited, and may becontrolled within an appropriate range wherein the additive does notcause an adverse effect on the composition and the pattern obtainedtherefrom.

Each amount of the components in the composition is not particularlylimited and may be controlled considering compositions of desirablelight absorption layer, silicon containing layer, and quantum dotpolymer composite.

In an embodiment, an electronic device includes the layered structure.The electronic device may be a display device (e.g., liquid crystaldisplay (LCD) or OLED display device), an organic electroluminescentdevice, a micro LED device, a light emitting diode (LED), an imagesensor, or an IR sensor.

An embodiment provides a display device including the layered structure.The display device includes a light source (e.g., light emitting module)and a photoluminescent color filter (C/F) layer disposed on the lightsource. The photoluminescent color filter layer includes the layeredstructure. The light source (e.g., light emitting module) is configuredto provide the photoluminescent color filter layer with incident light(see FIG. 6A). The display device may exhibit color reproducibility ofgreater than or equal to about 80%, based on a DCI reference andconversion efficiency (CE) of greater than or equal to about 20%.

The display device may be a display device including anelectroluminescent element (e.g., organic light emitting diode (OLED))as a light source (e.g., light emitting module). Herein, the lightemitting module includes a plurality of light emitting unit respectivelycorresponding to the first section and the second section, and the lightemitting unit may include a first electrode and a second electrodefacing each other and an emission layer disposed between the first andsecond electrodes (see FIG. 6B).

Each light emitting unit of the light emitting module providesexcitation light (e.g., blue light) for the photoluminescent colorfilter layer, and the first section (e.g., R section) and the secondsection (e.g., G section) of the photoluminescent color filter layerrespectively emits first light (R light) and second light (G light).Each light emitting unit is controlled by a thin film transistor (TFT)and may respectively emit but is not limited thereto. The thin filmtransistor has no particular limit in terms of a structure and material.

The light source (e.g., a light emitting module) may further include acharge auxiliary layer (e.g., a charge transport layer, a chargeinjection layer, or a combination thereof) between the first electrodeand the emission layer, between the second electrode and the emissionlayer, or all of them. When the first electrode is a cathode, the secondelectrode may be an anode. When the first electrode is an anode, thesecond electrode may be a cathode.

The organic light emitting diode OLED may include at least two pixelelectrodes (e.g., a first electrode) formed on a substrate, a pixeldefining layer formed between the adjacent pixel electrodes, an organiclight emitting layer formed on the pixel electrodes, and a commonelectrode layer (e.g., a second electrode) formed on the organic lightemitting layer.

Types of the charge auxiliary layer may be different depending on a kindof electrode. Between the cathode and the emission layer, an electrontransport layer, an electron injection layer, a hole blocking layer, ora combination thereof may be provided. Between the anode and theemission layer, a hole transport layer, a hole injection layer, anelectron blocking layer, or a combination thereof may be disposed.

Each light emitting unit of the light emitting module may include anorganic electroluminescent diode. The organic electroluminescent diodehas no particular limit in terms of a structure and a material.

The device may be fabricated by separately preparing the layeredstructure and the OLED (for example, the blue OLED), respectively, andcombining them. The device may be fabricated by directly forming thephotoluminescent layer (e.g., a pattern of a quantum dot-polymercomposite including R section and G section) over the OLED (e.g., thesecond electrode).

In an embodiment, the display device may be a liquid crystal display(LCD). FIG. 6C shows an embodiment of a liquid crystal display (LCD).The liquid crystal display (LCD) further includes a lower substrate, anupper substrate, a polarizing plate disposed under the lower substrate,and a liquid crystal layer disposed between the upper and lowersubstrates, wherein the photoluminescent layer is provided on the uppersubstrate facing the liquid crystal layer, and the light source may bedisposed under the polarizing plate.

The light source may include a light emitting element (e.g., lightemitting diode (LED)) and optionally a light guide panel.

The display device may further include a polarizer between the lowersubstrate and the photoluminescent color filter layer.

FIG. 6C is a cross-sectional view of a liquid crystal display accordingto an embodiment. Referring to FIG. 6C, a photoluminescent liquidcrystal display device according to an embodiment includes a liquidcrystal panel 200, a polarizing plate 300 disposed under the liquidcrystal panel 200, and a backlight unit (BLU) disposed under thepolarizing plate 300. The backlight unit includes (e.g., blue) lightsource 110. The backlight unit may further include a light guide panel120. The backlight unit may not include a light guide panel 120.

The liquid crystal panel 200 includes a lower substrate 210, an uppersubstrate 260, a liquid crystal layer 220 disposed between the upper andlower substrates, and a photoluminescent color filter layer provided onthe upper substrate. The photoluminescent color filter layer includesthe layered structure.

The lower substrate 210 that is also referred to as an array substratemay be a transparent insulation material substrate (e.g., a glasssubstrate, a polymer substrate including a polyester such aspolyethylene terephthalate (PET) or polyethylene naphthalate (PEN),polycarbonate, and/or a polyacrylate, inorganic material substrate of apolysiloxane, Al₂O₃, or ZnO. A wire plate 211 is disposed on the lowersubstrate 210. The wire plate 211 may include a plurality of gate wiresand data wires that define a pixel area, a thin film transistor disposedadjacent to a crossing region of gate wires and data wires, and a pixelelectrode for each pixel area, but is not limited thereto. Details ofsuch a wire plate are not particularly limited.

The liquid crystal layer 220 may be disposed on the wire plate 211. Theliquid crystal layer 220 may include an alignment layer 221 on and underthe liquid crystal layer 220 to initially align the liquid crystalmaterial included therein. Details (e.g., a liquid crystal material, analignment layer material, a method of forming liquid crystal layer, athickness of liquid crystal layer, or the like) of the liquid crystalmaterial and the alignment layer are not particularly limited.

A lower polarizing plate 300 is provided under the lower substrate.Materials and structures of the polarizing plate 300 are notparticularly limited. A backlight unit (e.g., emitting blue light) maybe disposed under the polarizing plate 300. An upper optical element oran upper polarizer 300 may be provided between the liquid crystal layer220 and the upper substrate 260, but is not limited thereto. Forexample, the upper polarizer may be disposed between a liquid crystallayer 220 (or a common electrode 231) and a photoluminescent layer 230.The polarizing plate 300 may be a suitable polarizer that may be used ina liquid crystal display device. The polarizer may be TAC (triacetylcellulose) having a thickness of less than or equal to about 200 μm, butis not limited thereto. In an embodiment, the upper optical element maybe a coating that controls a refractive index without a polarizationfunction.

The backlight unit may include a light emitting element (e.g., LED) thatemits excitation light. In an embodiment, the backlight unit may be anedge-type lighting. For example, the backlight unit may include areflector (not shown), a light guide panel (not shown) provided on thereflector and providing a planar light source with the liquid crystalpanel 200, and/or at least one optical sheet (not shown) on the lightguide panel, for example, a diffusion plate, a prism sheet, and thelike, but is not limited thereto. In an embodiment, the backlight unitmay be a direct lighting. For example, the backlight unit may have areflector, and may have a plurality of fluorescent lamps disposed on thereflector at regular intervals, or may have an LED operating substrateon which a plurality of LEDs may be disposed, a diffusion plate thereon,and optionally at least one optical sheet. Details (e.g., each componentof light guide and various optical sheets, a reflector, and the like) ofsuch a backlight unit are not particularly limited.

The upper substrate 260 may be the aforementioned light transmittingsubstrate. The layered structure is provided on a bottom surface of theupper substrate. For example, the light absorption layer 250 may beprovided on a bottom surface of the upper substrate, the Si containinglayer 240 may be disposed on the light absorption layer, and thephotoluminescent layer 230 may be disposed on the Si containing layer. Ablack matrix 232 is provided under the Si containing layer and has anopening and hides the gate line, the data line, and the thin filmtransistor of the wire plate the lower substrate. For example, the blackmatrix 232 may have a lattice shape. In openings of the black matrix232, a photoluminescent layer 230 including a first section (R)configured to emit light (e.g., red light) in a first peak wavelength, asecond section (G) configured to emit light (e.g., green light) in asecond peak wavelength, and a third section (B) configured toemit/transmit for example blue light may be provided. If desired, thephotoluminescent color filter layer may further include at least one ofa fourth section. The fourth section may include a quantum dot emittingdifferent colors (e.g., cyan, magenta, and yellow) from the lightemitted from the first to third sections.

In the photoluminescent color filter layer 230, sections forming apattern may be repeated corresponding to pixel areas formed on the lowersubstrate. A transparent common electrode 231 may be provided on thephotoluminescent color filter layer.

The third section (B) configured to emit/transmit blue light may be atransparent color filter that does not change a light emitting spectrumof the light source. In this case, blue light emitted from the backlightunit may enter in a polarized state and may be emitted through thepolarizer and the liquid crystal layer as is. If desired, the thirdsection may include quantum dots emitting blue light.

The display device may further include an optical filter layer (e.g.,red/green light or yellow light recycling layer) that is disposedbetween the photoluminescent layer 230 (e.g., the quantum dot polymercomposite layer) and the liquid crystal layer 220 (or the upperpolarizer 300). The optical filter layer may transmit at least a portionof a third light (e.g., excitation light), and reflect at least aportion of a first light and/or a second light. The optical filter layermay reflect light having a wavelength of greater than 500 nm. The firstlight may be green (or red) light, the second light may be red (orgreen) light, and the third light may be blue light.

Hereinafter, the embodiments are illustrated in more detail withreference to examples. However, they are exemplary embodiments of thepresent invention, and the present invention is not limited thereto.

EXAMPLES Measurement Method:

1. Luminous efficiency (specifically, quantum yield (QY)), lightconversion rates (also referred to as conversion efficiency (CE)), andprocess maintenance rates are obtained as follows:

A blue light conversion rate of the layered structure comprising aquantum dot composite film is obtained by inserting the manufacturedlayered structure between a light guide panel and an optical sheet of60-inch television (TV) equipped with a blue light emitting diode (LED)having a peak wavelength of 449 nm, operating the TV to analyze lightemitting characteristics with a spectroradiometer (CS-2000, KonicaMinolta Co.) positioned 45 centimeters (cm) away from the TV, obtain aspectrum of light emitted from the TV, and obtain a photoluminescence(PL) spectrum of emitted light.

The total light dose (B) of the excitation light is obtained byintegrating the PL spectrum, the PL spectrum of the quantum dotcomposite film is measured, a dose (A) of green light emitted from thequantum dot composite film and a dose (B′) of blue light are obtained.

Luminous efficiency and light conversion rate are as follows.

A/B×100=luminous efficiency (QY,%)

A/(B−B′)×100=conversion efficiency (%)

2. A process maintenance rate is a ratio of a light conversionefficiency (CE, %) after the process relative to light conversionefficiency (CE, %) before the process. For example, a processmaintenance rate is a ratio of a light conversion efficiency after FOBto a light conversion efficiency before FOB (i.e., a light conversionefficiency after PRB).

3. Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) Analysis

TOF-SIMS V (ION-TOF GmbH, Germany) mounted with a 25 kiloelectronvolts(keV) Bi+ ion gun is used to perform a TOF-SIMS analysis.

4. Scanning Transmission Electron Microscope (STEM) High Angle AnnularDark Field (HAADF) Analysis

HAADF analysis is performed using STEM (TITAN-80-300, FEI).

Reference Example 1: Preparation of Quantum Dot

(1) 0.2 millimoles (mmol) of indium acetate, 0.6 mmol of palmitic acid,and 10 milliliters (mL) of 1-octadecene are put in a reactor and heatedat 120° C. under vacuum. After 1 hour, an atmosphere in the reactor isconverted into nitrogen. The reactor is heated at 280° C., a mixedsolution of tris(trimethylsilyl)phosphine ((TMS)₃P, 0.1 mmol) andtrioctylphosphine (0.5 mL) is rapidly injected thereinto, and themixture is reacted for 20 minutes. Subsequently, the reaction solutionis rapidly cooled down to room temperature and acetone is added theretoto occur a precipitate, which is then separated by centrifuging andre-dispersed in toluene. The obtained InP semiconductor nanocrystalshows a UV first absorption maximum wavelength ranging from 420nanometers (nm) to 600 nm.

0.3 mmol (0.056 grams (g)) of zinc acetate, 0.6 mmol (0.189 g) of oleicacid, and 10 mL of trioctylamine are put in a reaction flask andvacuum-treated at 120° C. for 10 minutes. The reaction flask is heatedup to 220° C. after substituting inside of the reaction flask with N₂.After adding the toluene dispersion of the InP semiconductor nanocrystal(optical density (OD): 0.15) and a predetermined amount of S/TOP (sulfurdissolved or dispersed in trioctylphosphine, the amount of sulfur: 0.5mmol) to the reaction flask, the obtained mixture is heated up to 280°C. and reacted for 30 minutes. When the reaction is complete, thereaction mixture is rapidly cooled down to room temperature to obtain areaction mixture including the InP/ZnS semiconductor nanocrystal.

(2) An excess amount of ethanol is added to the reaction mixtureincluding the InP/ZnS semiconductor nanocrystal, and the mixture iscentrifuged. After the centrifuging, a supernatant is removed, and aprecipitate therein is dried and dispersed in chloroform or toluene toobtain a quantum dot solution (hereinafter, a QD solution). A UV-visabsorption spectrum of the QD solution is measured. The prepared quantumdot absorbs light in a wavelength range of 350 to 500 nm and emits greenlight in a wavelength range of 520 to 550 nm.

Reference Example 2

A pigment yellow (Pigment Yellow 138) is dispersed in a (meth)acrylatemonomer to prepare a composition for a light absorption layer(hereinafter, a yellow-light absorbing photo resist (YPR) composition).A content of the pigment yellow is 50 wt %, based on a total weight ofthe composition. The YPR composition is spin-coated on a glass substrateat 500 revolutions per minutes (rpm) for 10 seconds to obtain a film.

The obtained film is dried on a 100° C. hot plate for 2 minutes andthen, photocured with ultraviolet (UV) light of 80 millijoules (mJ) andadditionally heat-cured again at 230° C. for 30 minutes to obtain astructure (hereinafter, YPR/glass) having a yellow dye-(meth)acrylatepolymer composite layer (a thickness: 1 μm) on a glass substrate.

Reference Example 3: Composition for Si-Containing Layer I

A composition for a silicon containing layer (hereinafter, a barriercomposition A) is prepared by dissolving 1.7 g of SSQ (silsesquioxane)having a thiol group with a predetermined substitution degree (e.g., 12)(molecular weight (MVV): 1780 Daltons, Gelest, Inc.), 0.66 g oftriallylisocyanurate (TTT, MW: 249.27 Daltons, Sigma Aldrich Co., Ltd.),and 0.024 g of Irgacure TPOL in 0.78 g of propylene glycolmonomethylether acetate (PGMEA).

Reference Example 4: Composition for Si-Containing Layer II

A barrier composition B is prepared according to the same method asReference Example 3 except for using 0.384 g of tetraallylsilane havingfour vinyl groups (TAS, MW: 192.38, Gelest, Inc.) instead of TTT.

Reference Example 5: Composition for Non Si-Containing Layer III

A barrier composition C is prepared according to the same method asReference Example 3 except for using 0.94 g of ethylene glycoldi(3-mercaptopropionate) (GDMP, THIOCURE®) instead of SSQ.

Reference Example 6: Preparation of Composition for Quantum Dot-PolymerComposite 1. Preparation of Quantum Dot-Binder Dispersion

A chloroform dispersion of the synthesized quantum dots (InP/ZnScore-shell, green light emitting) including oleic acid as a hydrophobicorganic ligand on a surface thereof in Reference Example 1 is prepared.The chloroform dispersion including 50 g of the quantum dots is mixedwith 100 g of a binder (a quaternary copolymer of methacrylic acid,benzyl methacrylate, 2-hydroxyethyl methacrylate, and styrene (a moleratio=61.5:12:16.3:10.2), an acid value: 130 milligrams of potassiumhydroxide (KOH) per gram (mg KOH/g), a number average molecular weight:8000) solution (solvent: propylene glycol monomethyl ether acetatehaving a concentration of 30 weight percent (wt %)) to prepare a quantumdot-binder dispersion. It is confirmed that the quantum dots areuniformly dispersed in the prepared quantum dot-binder dispersion.

2. Preparation of Photosensitive Composition

To the quantum dot-binder dispersion prepared in 1., 100 g ofhexaacrylate having the following structure as a photopolymerizablemonomer, an oxime ester compound as an initiator, 30 g of TiO₂ as alight diffusing agent (an average particle size: 200 nm), and 300 g ofPGMEA as a solvent are added to obtain a photosensitive composition(hereinafter, referred to as a QDPR composition).

wherein

It is confirmed that the prepared composition may form dispersionwithout showing any noticeable agglomeration due to the addition of thequantum dots.

Preparation of Layered Structure Example 1

A silicon containing layer (a thickness: 1 micrometer (μm)) is formed bycoating the barrier composition A according to Reference Example 3 onthe YPR/glass prepared according to Reference Example 2 at 4000 rpm for5 seconds and then, photocuring the barrier composition A with UV lightof 80 mJ and drying at 180° C. to remove a solvent for 10 minutes.

On the silicon containing layer, the QD PR composition according toReference Example 6 is spin-coated at 160 rpm for 5 seconds andheat-treated or pre-baked (PRB) on a 100° C. hot plate. The PRB-treatedfilm is photocured with UV light of 80 mJ and heat-treated or post baked(FOB) at 180° C. for 30 minutes under a N₂ atmosphere. Accordingly, alayered structure (QD-PR (6 μm)/Si-layer (1 μm)/YPR (1 μm)/glass) havinga photoluminescent layer (a thickness: 6 μm) including a quantum dotpolymer composite is obtained.

Example 2

A layered structure (QD-PR (6 μm)/Si-containing layer (1 μm)/YPR (1μm)/glass) is obtained according to the same method as Example 1 exceptfor using the barrier composition B instead of the barrier compositionA.

Example 3

A layered structure (QD-PR (6 μm)/Si-containing layer (500 nm)/YPR (1μm)/glass) is obtained according to the same method as Example 1 exceptfor forming a SiO₂ layer (thickness: 500 nm) on the YPR/glass accordingto Reference Example 2 through sputtering (temperature: roomtemperature, atmosphere: oxygen, target: SiO₂, purity: 99.99%) insteadof using the barrier composition A.

Example 4

A layered structure (QD-PR (6 μm)/Si-containing layer (1 μm)/YPR (1μm)/glass) is obtained according to the same method as Example 1 exceptfor forming a layered silicon containing layer in the following manneron the YPR/glass according to Reference Example 2 instead of using thebarrier composition A:

A cross-linked polymer layer is formed by spin-coating amulti-functional acrylate monomer-containing coating liquid on theYPR/glass according to Reference Example 2 to form a film and then,heat-treating the film at 100° C. for 2 minutes and photocuring the filmwith UV light of 80 mJ at 180° C. for 30 minutes. On the cross-linkedpolymer layer, a low refractive layer is formed via a spin-coating of aTEOS-containing silica precursor and a subsequent heat-treatment at 140°C. for 30 minutes to obtain a layered silicon containing layer (athickness: 1 μm).

Example 5

A layered structure (QD-PR (6 μm)/Si-containing layer (1 μm)/YPR (1μm)/glass) is obtained according to the same method as Example 1 exceptfor spin-coating a TEOS-containing silica precursor solution instead ofthe barrier composition A and heat-treating it at 140° C. for 30 minutesto form a porous silica layer.

Comparative Example 1

A layered structure (QD-PR (6 μm)/YPR (1 μm)/glass) having a quantum dotpolymer composite-containing photoluminescent layer on the YPR/glassaccording to Reference Example 2 is obtained according to the samemethod as Example 1 except for forming no silicon containing layer byusing the barrier composition A.

Comparative Example 2

A layered structure (QD-PR (6 μm)/ZnO-containing layer (500 nm)/YPR (1μm)/glass) is obtained according to the same method as Example 1 exceptfor forming a ZnO layer (a thickness: 500 nm) on the YPR/glass accordingto Reference Example 2 instead of using the barrier composition Athrough sputtering (temperature: room temperature, atmosphere: oxygen,target: ZnO, purity: 99.99%).

Comparative Example 3

A layered structure (QD-PR (6 μm)/TiO₂ containing layer (500 nm)/YPR (1μm)/glass) is obtained according to the same method as Example 1 exceptfor forming a TiO₂ layer (a thickness: 500 nm) on the YPR/glassaccording to Reference Example 2 instead of using the barriercomposition A through sputtering (temperature: room temperature,atmosphere: oxygen, target: TiO₂, purity: 99.99%).

Comparative Example 4

A layered structure (QD-PR (6 μm)/non Si-containing thiolenecross-linking polymer layer (1 μm)/YPR (1 μm)/glass) is obtainedaccording to the same method as Example 1 except for using the barriercomposition C instead of the barrier composition A.

Comparative Example 5

A QD PR composition is spin-coated on a glass substrate at 160 rpm for 5seconds and heat-treated or prebaked (PRB) on a 100° C. hot plate. ThePRB-treated film is photocured with UV light of 80 mJ and then, heattreated or post-baked (FOB) under a N₂ atmosphere at 180° C. for 30minutes. Accordingly, a layered structure (QD-PR (6 μm)/glass) having aphotoluminescent layer (a thickness: 6 μm) including the quantum dotpolymer composite is obtained.

Chemical/Thermal Degradation Phenomenon of Photoluminescent Layer Due toIntroduction of YPR Experimental Example 1

Time-of-flight secondary Ion mass spectrometry (TOF-SIMS) and High AngleAnnular Dark Field (HAADF) analyses are performed regarding the layeredstructure according to Comparative Example 1 after FOB by using TOF-SIMSV (ION-TOF GmbH, Germany) equipped with a 25 keV Bi⁺ ion gun. Theresults are shown in FIGS. 7 and 8.

Referring to the results of FIGS. 7 and 8, in the layered structure ofComparative Example 1, a dye component of the light absorption layer isdiffused up to the photoluminescent layer, and a sulfur component fromthe photoluminescent layer is diffused into the light absorption layerdue to the FOB heat treatment. This material movement on the interfacemay have a negative influence on photoluminescence characteristics ofquantum dots dispersed in the photoluminescent layer.

Light-emitting Characteristics of Layered Structure Experimental Example2

1. A light conversion rate of the layered structures according toComparative Examples 1 and 6 after PRB and FOB is measured. Aphotoluminescence spectrum after PRB is shown in FIG. 9.

Referring to the result of FIG. 9, the layered structure (WNPR) ofComparative Example 1 emits almost no blue light, but the layeredstructure (w/o YPR) of Comparative Example 6 shows a substantialemission of blue light. Accordingly, the layered structure ofComparative Example 6 may hardly emit light of a desired colorcoordinate. In addition, the layered structure of Comparative Example 1may realize color reproducibility of about 87%, but the layeredstructure of Comparative Example 6 may realize color reproducibility ofonly 41.2%.

2. Luminous efficiency of the layered structure after PRB is measured.Luminous efficiency after PRB of the layered structure according toComparative Example 1 shows to be about 77% of the luminous efficiencyafter PRB of the layered structure according to Comparative Example 6.This result implies that a substantial optical loss may occur due to thelight absorption layer.

3. Light conversion rates after PRB and FOB of the layered structure aremeasured to calculate a process maintenance rate about FOB. A processmaintenance rate of the layered structure according to ComparativeExample 1 is only about 88% of that of the layered structure accordingto Comparative Example 6.

4. Luminous efficiency after FOB of the layered structure according toComparative Example 1 is only about 70% of luminous efficiency after FOBof the layered structure according to Comparative Example 6.

The foregoing results show that thermal and chemical stability of thelayered structure may be greatly reduced due to the presence of lightabsorption layer.

Experimental Example 3

1. Luminous efficiency after PRB regarding the layered structuresaccording to Comparative Examples 1 to 4 and Examples 1 to 4 ismeasured. Based on luminous efficiency of Comparative Example 1, aluminous efficiency difference of each layered structure according toComparative Examples 1 to 4 and Examples 1 to 4 is calculated and shownin Table 1.

TABLE 1 Luminous efficiency difference after PRB relative to ComparativeExample 1 (%) Comparative Example 1 (Ref.) 0 Example 1 1.3 Example 2 1.4Example 3 0.8 Example 4 3.6 Comparative Example 2 0.3 ComparativeExample 3 −0.4 Comparative Example 4 0

The layered structures according to Examples show improved luminousefficiency after PRB (initial luminous efficiency) compared with thelayered structure formed by introducing YPR without a Si-containinglayer according to Comparative Example 1. This result shows that in thelayered structures of Examples, an optical loss caused by theintroduction of a light absorption layer may be reduced/suppressed. Thelayered structures according to Comparative Examples 2 to 4 include abarrier layer formed of a different composition from that of aSi-containing layer but show almost no optical loss-improving effect,and even a titanium oxide layer shows an increased optical loss.

2. Luminous efficiency after FOB of the layered structures according toComparative Examples 1 to 4 and Examples 1 to 4 are measured. Based onluminous efficiency of Comparative Example 1, a luminous efficiencydifference thereof are calculated and shown in Table 1.

Light conversion rates of the layered structures after PRB and FOBaccording to Comparative Examples 1 to 4 and Examples 1 to 4 aremeasured to calculate a process maintenance rate about FOB. The resultsare shown in Table 2.

TABLE 2 Luminous efficiency Process difference after POB maintenancerelative to Comparative rate (%) Example 1 (%) Comparative Example 1(Ref.)  88.9 0 Example 1  99.6 3.6 Example 2  98.7 3.5 Example 3  98 2.3Example 4 102.7 6.3 Comparative Example 2  93.9 0.8 Comparative Example3  93.7 0.1 Comparative Example 4  92.2 0.8

The layered structures of Examples show remarkably improved processmaintenance rate and luminous efficiency after FOB (final luminousefficiency) compared with the layered structure of Comparative Example 1into which YPR is introduced without an Si-containing layer. This resultimplies that due to introduction of the Si-containing layer, the layeredstructures of Examples show reduced/relieved/suppressed from achemical/thermal degradation phenomenon and thus a luminous efficiencydegradation caused by the introduction of a light absorption layer.Referring to the result of Table 2, the layered structures according toComparative Examples 2 to 4 include a barrier layer formed of adifferent composition instead of an Si-containing layer but show still aserious chemical/thermal degradation phenomenon.

While this disclosure has been described in connection with what ispresently considered to be practical example embodiments, it is to beunderstood that the invention is not limited to the disclosedembodiments, but, on the contrary, is intended to cover variousmodifications and equivalent arrangements included within the spirit andscope of the appended claims.

What is claimed is:
 1. A display device comprising a light sourcecomprising a plurality of light units; and a photoluminescent colorfilter layer disposed on the light source and comprising a layeredstructure, wherein the layered structure comprises: a photoluminescentlayer comprising a quantum dot polymer composite; a light absorptionlayer disposed on the photoluminescent layer, the light absorption layercomprising an absorptive color-filter material; and a silicon containinglayer disposed between the photoluminescent layer and the lightabsorption layer, wherein the quantum dot polymer composite comprises afirst polymer matrix and a plurality of quantum dots dispersed in thefirst polymer matrix, wherein the layered structure comprises a firstsection emitting first light and a second section emitting second lightdifferent from the first light, and wherein the plurality of light unitscomprises a first light unit corresponding to the first section andsupplying excitation light to the first section and a second light unitcorresponding to the second section and supplying excitation light tothe second section.
 2. The display device of claim 1, wherein thesilicon containing layer comprises a porous structure of a silicon oxideand does not comprises a quantum dot, and the silicon containing layerhas a refractive index of greater than or equal to about 1.2 and lessthan 1.45.
 3. The display device of claim 1, wherein the refractiveindex of the silicon containing layer is lower than each of a refractiveindex of the light absorption layer and a refractive index of thephotoluminescent layer.
 4. The display device of claim 1, wherein theplurality of light units comprises an organic light emitting diode. 5.The display device of claim 1, wherein the excitation light comprisesblue light, green light, or a combination thereof.
 6. The display deviceof claim 1, wherein the display device further comprises a lighttransmitting substrate, and wherein the silicon containing layer has afirst surface contacting the photoluminescent layer and a second surfaceopposite to the first surface, the light absorption layer is disposeddirectly on the second surface of the silicon containing layer, and thelight transmitting substrate is disposed on the light absorption layer.7. The display device of claim 1, wherein in the layered structure, thequantum dot polymer composite is patterned to correspond to the firstsection and the second section, respectively, and the silicon containinglayer is patterned to correspond to the first section and the secondsection.
 8. The display device of claim 1, wherein the light absorptionlayer further comprises a second polymer matrix and the absorptivecolor-filter material is dispersed in the second matrix.
 9. The displaydevice of claim 1, wherein the light absorption layer is patterned tohave a first absorption section and a second absorption sectioncorresponding to the first section and the second section, respectively,and the first absorption section is configured to transmit at least thefirst light and the second absorption section is configured to transmitat least the second light.
 10. The display device of claim 1, whereinthe first polymer matrix comprises a cross-linked polymer, a carboxylicacid group-containing binder polymer, or a combination thereof.
 11. Thedisplay device of claim 1, wherein the plurality of quantum dotscomprise a Group II-VI compound, a Group III-V compound, a Group IV-VIcompound, a Group IV element or compound, a Group I-III-VI compound, aGroup I-II-IV-VI compound, or a combination thereof, based on thePeriodic Table, or wherein the absorptive color-filter materialcomprises an inorganic pigment, an inorganic dye, an organic pigment, anorganic dye, or a combination thereof.
 12. The display device of claim1, wherein the silicon containing layer comprises a porous structure ofSiO_(x) wherein x is 1 to 2, and the porous structure has silicon oxidemicropores.
 13. The display device of claim 1, wherein the siliconcontaining layer comprises a porous silica layer and a first layercomprising a cross-linked polymer, wherein the porous silica layer isdisposed directly on the first layer comprising the cross-linkedpolymer.
 14. The display device of claim 1, wherein an amount of theabsorptive color-filter material is greater than or equal to about 10 wt% and less than or equal to about 90 wt %, based on a total weight ofthe absorptive color filter.
 15. The display device of claim 1, whereinthe silicon containing layer comprises an organosilicon compoundcomprising a moiety represented by *—Si—O—Si—* wherein * is a linkingportion with an adjacent atom, and the organosilicon compound comprisesa silsesquioxane structural unit represented by (RSiO_(3/2))_(n) andhaving a cage structure, a ladder structure, a polymeric structure, or acombination thereof, wherein n is 1 to 20 and R is hydrogen, a C1 to C30substituted or unsubstituted aliphatic moiety, a C3 to C30 substitutedor unsubstituted alicyclic moiety, a C6 to C30 substituted orunsubstituted aromatic moiety, or a combination thereof.
 16. The displaydevice of claim 1, wherein the silicon containing layer has a siliconcontent of greater than or equal to 10 weight percent and less than orequal to about 90 weight percent, based on a total weight thereof. 17.The display device of claim 1, wherein a thickness of the siliconcontaining layer is greater than or equal to 100 nanometers and lessthan or equal to 3 micrometers.
 18. The display device of claim 1,wherein the refractive index of the silicon containing layer is in arange of from about 1.2 to about 1.3.
 19. The display device of claim 1,further comprising a micro LED.
 20. The display device of claim 1,wherein the repeating section of the layered structure comprises a firstsection configured to emit a first light and a second section configuredto emit a second light that is different from the first light, and thelight source comprises a light emitting module and the light emittingmodule comprises a plurality of light emitting unit respectivelycorresponding to the first section and the second section.